The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2012
Filed:
Mar. 31, 2009
Tadahiro Ishizaka, Kofu, JP;
Shigeru Mizuno, Delmar, NY (US);
Satohiko Hoshino, Delmar, NY (US);
Hiroyuki Nagai, Clifton Park, NY (US);
Yuki Chiba, Rensselaer, NY (US);
Frank M. Cerio, Jr., Albany, NY (US);
Tadahiro Ishizaka, Kofu, JP;
Shigeru Mizuno, Delmar, NY (US);
Satohiko Hoshino, Delmar, NY (US);
Hiroyuki Nagai, Clifton Park, NY (US);
Yuki Chiba, Rensselaer, NY (US);
Frank M. Cerio, Jr., Albany, NY (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
A method for integrating metal-containing cap layers into copper (Cu) metallization of semiconductor devices. In one embodiment, the method includes providing a patterned substrate containing metal surfaces and dielectric layer surfaces, and modifying the dielectric layer surfaces by exposure to a reactant gas containing a hydrophobic functional group, where the modifying substitutes a hydrophilic functional group in the dielectric layer surfaces with a hydrophobic functional group. The method further includes depositing metal-containing cap layers selectively on the metal surfaces by exposing the modified dielectric layer surfaces and the metal surfaces to a deposition gas containing metal-containing precursor vapor.