The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2010
Filed:
Apr. 07, 2006
Frank M. Cerio, Jr., Schenectady, NY (US);
Frank M. Cerio, Jr., Schenectady, NY (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
An iPVD system uses a high density inductively coupled plasma (ICP) at high pressure of at least 50 mTorr to deposit uniform ultra-thin layer of a tantalum nitride material barrier material onto the sidewalls of high aspect ratio nano-size features on semiconductor substrates, preferably less than 2 nm thick with less than 4 nm in the field areas. The process includes depositing an ultra-thin TaN barrier layer having a high nitrogen concentration that produces high resistivity, preferably at least 1000 micro-ohm-cm. The ultra-thin TaN film is deposited by a low deposition rate process of less than 20 nm/minute, preferably 2-10 nm/min, to produce the high N/Ta ratio layer without nitriding the tantalum target. The layer provides a barrier to copper (Cu) diffusion and a high etch resistant etch-stop layer for subsequent deposition-etch processes.