The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2010
Filed:
Mar. 28, 2005
Tadahiro Ishizaka, Clifton Park, NY (US);
Tsukasa Matsuda, Delmar, NY (US);
Frank M. Cerio, Jr., Schenectady, NY (US);
Kaoru Yamamoto, Delmar, NY (US);
Tadahiro Ishizaka, Clifton Park, NY (US);
Tsukasa Matsuda, Delmar, NY (US);
Frank M. Cerio, Jr., Schenectady, NY (US);
Kaoru Yamamoto, Delmar, NY (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
A plasma enhanced atomic layer deposition (PEALD) system includes a first chamber component coupled to a second chamber component to provide a processing chamber defining an isolated processing space within the processing chamber. A substrate holder is provided within the processing chamber and configured to support a substrate, a first process material supply system is configured to supply a first process material to the processing chamber and a second process material supply system is configured to supply a second process material to the processing chamber. A power source is configured to couple electromagnetic power to the processing chamber, and a sealing assembly interposed between the first and second chamber components. The sealing assembly includes a plurality of sealing members configured to reduce the amount of external contaminants permeating through an interface of the first and second components into the isolated processing space of the processing chamber, wherein the film is formed on the substrate by alternatingly introducing the first process material and the second process material.