Francis Lionel Benistant

USPTO Granted Patents = 19 (Patent Applications = 1)

Average Co-Inventor Count = 3.9

ph-index = 5

Forward Citations = 161(Granted Patents)

Company Filing History:

8 out of 1,016

Globalfoundries Singapore Pte. Ltd.

National University of Singapore

patents

4. 2 out of 962

Chartered Semiconductor Manufacturing Ltd (corporation)

patents

5. 1 out of 37,905

Micron Technology Incorporated

patents

where one patent can have more than one assignee

Years Active: 2005-2018

where 'Filed Patents' based on already Granted Patents

19 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 10164099 - Device with diffusion blocking layer in source/drain region (2018-12-25),

2. 9997225 - System and method for modular simulation of spin transfer torque magnetic random access memory devices (2018-06-12),

3. 9966433 - Multiple-step epitaxial growth S/D regions for NMOS FinFET (2018-05-08),

4. 9947788 - Device with diffusion blocking layer in source/drain region (2018-04-17),

5. 9871132 - Extended drain metal-oxide-semiconductor transistor (2018-01-16),

6. 9673084 - Isolation scheme for high voltage device (2017-06-06),

7. 9577040 - FinFET conformal junction and high epi surface dopant concentration method and device (2017-02-21),

8. 9559176 - FinFET conformal junction and abrupt junction with reduced damage method and device (2017-01-31),

9. 9406752 - FinFET conformal junction and high EPI surface dopant concentration method and device (2016-08-02),

10. 9397162 - FinFET conformal junction and abrupt junction with reduced damage method and device (2016-07-19),

11. 9269770 - Integrated circuit system with double doped drain transistor (2016-02-23),

12. 8994107 - Semiconductor devices and methods of forming the semiconductor devices including a retrograde well (2015-03-31),

13. 8860142 - Method and apparatus to reduce thermal variations within an integrated circuit die using thermal proximity correction (2014-10-14),

14. 8354321 - Method for fabricating semiconductor devices with reduced junction diffusion (2013-01-15),

15. 8293544 - Method and apparatus to reduce thermal variations within an integrated circuit die using thermal proximity correction (2012-10-23),

Title: Francis Lionel Benistant: A Pioneer in Semiconductor Technology

Introduction: Francis Lionel Benistant is a prominent inventor based in Singapore, recognized for his contributions to semiconductor technology. With a remarkable portfolio of 19 patents, he has made significant advancements in the field, particularly in devices and methods pertaining to memory technology.

Latest Patents: Benistant’s recent innovations highlight his expertise in semiconductor device architecture. One of his latest patents is titled "Device with diffusion blocking layer in source/drain region." This invention involves a fin structure on a substrate with a complex arrangement of gate electrodes and epitaxial semiconductor materials. The device strategically incorporates a diffusion blocking layer to enhance performance parameters. Another notable patent is "System and method for modular simulation of spin transfer torque magnetic random access memory devices." This invention outlines a sophisticated method for simulating the behavior of STT-MRAM devices, employing hardware processors and logic instructions to represent physical phenomena through functional blocks in a magnetic stack.

Career Highlights: Benistant has significantly impacted the semiconductor industry through his roles at GlobalFoundries Singapore Pte. Ltd. and GlobalFoundries Inc. His expertise in finFET technology and memory solutions has driven innovation within these leading semiconductor firms.

Collaborations: Throughout his career, Benistant has collaborated with talented individuals, including Shesh Mani Pandey and Benjamin Colombeau. Their teamwork has facilitated groundbreaking innovations in semiconductor devices and memory technology.

Conclusion: Francis Lionel Benistant continues to influence the semiconductor industry with his inventive spirit and dedication. His patented technologies are paving the way for future advancements in memory devices and semiconductor design, establishing him as a key figure in the field.

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