The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2018
Filed:
Aug. 03, 2016
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Zhiqing Li, Halfmoon, NY (US);
Shesh Mani Pandey, Saratoga Springs, NY (US);
Francis Benistant, Singapore, SG;
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 21/22 (2006.01); H01L 29/167 (2006.01); H01L 29/16 (2006.01); H01L 21/02 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0847 (2013.01); H01L 21/02532 (2013.01); H01L 21/2225 (2013.01); H01L 29/167 (2013.01); H01L 29/1608 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract
A method of forming NFET S/D structures with multiple layers, with consecutive epi-SiP layers being doped at increasing dosages of P and the resulting device are provided. Embodiments include forming multiple epi-Si layers in each S/D cavity of a NFET; and performing in-situ doping of P for each epi-Si layer, wherein consecutive epi-Si layers are doped at increasing dosages of P.