The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 23, 2016

Filed:

Mar. 08, 2007
Applicants:

Yisuo LI, Singapore, SG;

Gang Chen, Boise, ID (US);

Francis Benistant, Singapore, SG;

Purakh Raj Verma, Singapore, SG;

Hong Yang, Singapore, SG;

Shao-fu Sanford Chu, Singapore, SG;

Inventors:

Yisuo Li, Singapore, SG;

Gang Chen, Boise, ID (US);

Francis Benistant, Singapore, SG;

Purakh Raj Verma, Singapore, SG;

Hong Yang, Singapore, SG;

Shao-fu Sanford Chu, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/08 (2006.01); H01L 29/78 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0847 (2013.01); H01L 29/7833 (2013.01); H01L 29/0843 (2013.01); H01L 29/6659 (2013.01); H01L 29/66681 (2013.01); H01L 29/7393 (2013.01); H01L 29/7816 (2013.01);
Abstract

An integrated circuit system includes a substrate, forming a gate over the substrate, forming a first drift region having a first counter diffused region and a source diffused region, the first drift region in the substrate adjacent a first side of the gate, and forming a second drift region having a second counter diffused region and a drain diffused region, the second drift region in the substrate adjacent a second side of the gate opposite the first side of the gate.


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