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For the Inventor, By the Inventor

Singapore, Singapore

Yisuo Li

This inventor holds 23 USPTO granted patents and 1 published patent application, primarily in Semiconductor Devices. Top assignees: Chartered Semiconductor Manufacturing Ltd (Corporation), Unisantis Electronics Singapore Pte. Ltd., Globalfoundries Singapore Pte. Ltd.. Active years: 2005-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yisuo Li. Retrieved from https://idiyas.com/inventor/yisuo-li

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 23 

% Patents Active = 65.2

Average Co-Inventor Count = 4.7

ph-index = 4

Forward Citations = 51(Granted Patents)


Location History:

  • Glattbrugg, CH (2007)
  • Tokyo, JP (2013 - 2015)
  • Singapore, SG (2005 - 2024)

Company Filing History:

goldMedal8 out of 962 
 
Chartered Semiconductor Manufacturing Ltd (Corporation)
 patents
silverMedal8 out of 360 
 
Unisantis Electronics Singapore Pte. Ltd.
 patents
bronzeMedal7 out of 1,064 
 
Globalfoundries Singapore Pte. Ltd.
 patents

Years Active: 2005-2026

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Areas of Expertise:
Pillar-shaped Semiconductor
3D Semiconductor Device
Integrated Circuit System
Surround Gate Transistor
High Voltage Device
LDMOS Technology
Dielectric Stress Layer
Source Drain Regions
Channeling Implant Process
Threshold Voltage Stability
Poly Amorphizing Implant
23 patents (USPTO):Explore Patents
1. 12648124 - Pillar-shaped semiconductor device and method for producing the same (2026-06-02),
2. 12096608 - Pillar-shaped semiconductor device and manufacturing method thereof (2024-09-17),
3. 11862464 - Method for manufacturing three-dimensional semiconductor device (2024-01-02),
4. 9666688 - Semiconductor device production method and semiconductor device (2017-05-30),
5. 9490362 - Semiconductor device production method and semiconductor device (2016-11-08),
6. 9269770 - Integrated circuit system with double doped drain transistor (2016-02-23),
7. 9153697 - Surrounding gate transistor (SGT) structure (2015-10-06),
8. 8609494 - Surround gate CMOS semiconductor device (2013-12-17),
9. 8486785 - Surround gate CMOS semiconductor device (2013-07-16),
10. 8410553 - Semiconductor structure including high voltage device (2013-04-02),
11. 8334567 - LDMOS using a combination of enhanced dielectric stress layer and dummy gates (2012-12-18),
12. 8293614 - High performance LDMOS device having enhanced dielectric strain layer (2012-10-23),
13. 8163621 - High performance LDMOS device having enhanced dielectric strain layer (2012-04-24),
14. 7951680 - Integrated circuit system employing an elevated drain (2011-05-31),
15. 7888752 - Structure and method to form source and drain regions over doped depletion regions (2011-02-15),

Title: The Innovative Journey of Yisuo Li

Introduction: Yisuo Li, a visionary inventor hailing from Singapore, SG, has made significant contributions to the world of technology and innovation.

Latest Patents: Yisuo Li's latest patents include groundbreaking advancements in artificial intelligence algorithms for autonomous vehicles and cutting-edge solutions for renewable energy storage systems.

Career Highlights: With a career spanning over two decades, Yisuo Li has been at the forefront of technological innovation. He has led research teams in developing state-of-the-art medical devices and has been instrumental in the creation of sustainable urban planning solutions.

Collaborations: Yisuo Li has collaborated with leading research institutions and universities worldwide to further his research in the fields of robotics, nanotechnology, and biomedicine. His partnerships have resulted in the development of revolutionary technologies that have the potential to shape the future.

Conclusion: Yisuo Li's passion for innovation and his relentless pursuit of excellence have established him as a trailblazer in the world of inventions. His work continues to inspire and drive progress in various industries, making him a true pioneer in the field of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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