The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2015
Filed:
May. 26, 2011
Fujio Masuoka, Tokyo, JP;
Hiroki Nakamura, Tokyo, JP;
Shintaro Arai, Tokyo, JP;
Tomohiko Kudo, Tokyo, JP;
King-jien Chui, Tokyo, JP;
Yisuo LI, Tokyo, JP;
Yu Jiang, Tokyo, JP;
Xiang LI, Singapore, SG;
Zhixian Chen, Singapore, SG;
Nansheng Shen, Singapore, SG;
Vladimir Bliznetsov, Singapore, SG;
Kavitha Devi Buddharaju, Singapore, SG;
Navab Singh, Singapore, SG;
Fujio Masuoka, Tokyo, JP;
Hiroki Nakamura, Tokyo, JP;
Shintaro Arai, Tokyo, JP;
Tomohiko Kudo, Tokyo, JP;
King-Jien Chui, Tokyo, JP;
Yisuo Li, Tokyo, JP;
Yu Jiang, Tokyo, JP;
Xiang Li, Singapore, SG;
Zhixian Chen, Singapore, SG;
Nansheng Shen, Singapore, SG;
Vladimir Bliznetsov, Singapore, SG;
Kavitha Devi Buddharaju, Singapore, SG;
Navab Singh, Singapore, SG;
UNISANTIS ELECTRONICS SINGAPORE PTE LTD., Peninsula Plaza, SG;
Abstract
The semiconductor device according to the present invention is an nMOS SGT and is composed of a first n+ type silicon layer, a first gate electrode containing metal and a second n+ type silicon layer arranged on the surface of a first columnar silicon layer positioned vertically on a first planar silicon layer. Furthermore, a first insulating film is positioned between the first gate electrode and the first planar silicon layer, and a second insulating film is positioned on the top surface of the first gate electrode. In addition, the first gate electrode containing metal is surrounded by the first n+ type silicon layer, the second n+ type silicon layer, the first insulating film and the second insulating film.