The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 02, 2024

Filed:

Jun. 11, 2021
Applicant:

Unisantis Electronics Singapore Pte. Ltd., Singapore, SG;

Inventors:

Fujio Masuoka, Tokyo, JP;

Nozomu Harada, Tokyo, JP;

Yisuo Li, Singapore, SG;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/033 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H10B 10/00 (2023.01);
U.S. Cl.
CPC ...
H01L 21/0338 (2013.01); H01L 21/0335 (2013.01); H01L 21/0337 (2013.01); H01L 29/66666 (2013.01); H01L 29/7827 (2013.01); H10B 10/12 (2023.02);
Abstract

A second band-like mask material layer having a first band-like mask material layer of a same planar shape on its top is formed on a mask material layer on a semiconductor layer. Then, fourth band-like mask material layers having third band-like mask material layers of same planar shape on their top are formed on both side surfaces of the first and second band-like mask material layers. Sixth band-like mask material layers having fifth band-like mask material layers of same planar shape on their top are formed on the outside thereof. Then, an orthogonal band-like mask material layer is formed on the first band-like mask material layer, in a direction orthogonal to a direction in which the first band-like mask material layer extends. Semiconductor pillars are formed on overlapping areas of this orthogonal band-like mask material layer and the second and sixth band-like mask material layers by etching the semiconductor layer. Then, a pillar-shaped semiconductor device is formed with these semiconductor pillars being channels.


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