The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2018
Filed:
Feb. 09, 2016
Globalfoundries Inc., Grand Cayman, KY;
Shesh Mani Pandey, Saratoga Springs, NY (US);
Pei Zhao, Clifton Park, NY (US);
Baofu Zhu, Clifton Park, NY (US);
Francis L. Benistant, Singapore, SG;
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
A method includes forming a gate electrode structure above a channel region defined in a semiconductor material. The semiconductor material is recessed in a source/drain region. A first material is epitaxially grown in the source/drain region. The first material includes a dopant species having a first concentration. A diffusion blocking layer is formed in the source/drain region above the first material. A second material is epitaxially grown in the source/drain region above the diffusion blocking layer. The second material comprises the dopant species having a second concentration greater than the first concentration.