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Chun-Yao Ko

This inventor holds 34 USPTO granted patents, primarily in Non-Volatile Memory. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., United Microelectronics Corp.. Active years: 2008-2025.

USPTO Granted Patents = 34

% Patents Active = 88.2

Average Co-Inventor Count = 3.9

ph-index = 4

Forward Citations = 60(Granted Patents)

Location History:

Taoyuan County, TW (2012)
Bade, TW (2008 - 2014)
Hsinchu, TW (2014 - 2023)

Company Filing History:

32 out of 42,711

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

2 out of 7,255

United Microelectronics Corp.

patents

Years Active: 2008-2025

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Areas of Expertise:

Non-Volatile Memory

Memory Cell

Memory Device

Crosstalk Improvement

Memory Architecture

Manufacturing Method

Gate Layer

Capacitor Design

Leakage Currents

Image Sensor

Dense Layouts

Multiple-Time Programming

34 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12477726 - Memory device and method of manufacturing the same (2025-11-18),

2. 12342538 - Non-volatile memory (NVM) cell structure to increase reliability (2025-06-24),

3. 11844213 - Non-volatile memory (NVM) cell structure to increase reliability (2023-12-12),

4. 11387242 - Non-volatile memory (NVM) cell structure to increase reliability (2022-07-12),

5. 11367731 - Memory device and method of manufacturing the same (2022-06-21),

6. 11152383 - Non-volatile memory (NVM) cell structure to increase reliability (2021-10-19),

7. 10784276 - Non-volatile memory and method of manufacturing same (2020-09-22),

8. 10727222 - Memory system and memory cell having dense layouts (2020-07-28),

9. 10553597 - Memory cell including a plurality of wells (2020-02-04),

10. 10163920 - Memory device and memory cell (2018-12-25),

11. 10141323 - Non-volatile memory and method of manufacturing the same (2018-11-27),

12. 9837458 - Crosstalk improvement through P on N structure for image sensor (2017-12-05),

13. 9711516 - Non-volatile memory having a gate-layered triple well structure (2017-07-18),

14. 9620594 - Memory device, memory cell and memory cell layout (2017-04-11),

15. 9537016 - Memory device, gate stack and method for manufacturing the same (2017-01-03),

Title: The Innovative Journey of Inventor Chun-Yao Ko

Introduction: Chun-Yao Ko, a talented inventor hailing from Hsinchu, Taiwan, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: Chun-Yao Ko's latest patents focus on advancements in semiconductor technology, particularly in the development of energy-efficient microchips for various electronic devices.

Career Highlights: With a career spanning over two decades, Chun-Yao Ko has worked with leading tech companies in Taiwan, honing his skills in research and development. His expertise lies in creating cutting-edge solutions for complex technological challenges.

Collaborations: Throughout his career, Chun-Yao Ko has collaborated with top researchers and engineers in the industry, fostering a culture of innovation and knowledge-sharing. His collaborative efforts have led to the successful development of several patented inventions.

Conclusion: Chun-Yao Ko's passion for innovation and his relentless pursuit of technological advancement continue to inspire the next generation of inventors. His contributions to the field of technology have left an indelible mark, shaping the future of semiconductor technology.

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