The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 24, 2025

Filed:

Dec. 11, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Shih-Hsien Chen, Zhubei, TW;

Chun-Yao Ko, Hsinchu, TW;

Felix Ying-Kit Tsui, Cupertino, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/10 (2006.01); H10B 41/35 (2023.01); H10B 41/41 (2023.01); H10B 41/42 (2023.01); H10D 30/01 (2025.01); H10D 30/68 (2025.01); H10D 62/10 (2025.01); G11C 16/30 (2006.01);
U.S. Cl.
CPC ...
H10B 41/35 (2023.02); G11C 16/10 (2013.01); H10B 41/41 (2023.02); H10B 41/42 (2023.02); H10D 30/0411 (2025.01); H10D 30/683 (2025.01); H10D 62/115 (2025.01); G11C 16/30 (2013.01);
Abstract

A semiconductor structure includes a first well region disposed within a substrate and comprising a first doping type. A conductive structure overlies the first well region. A pair of first doped regions is disposed within the first well region on opposing sides of the conductive structure. The pair of first doped regions comprise a second doping type opposite the first doping type. A pair of second doped regions is disposed within the first well region on the opposing sides of the conductive structure. The pair of second doped regions comprise the second doping type and are laterally offset from the pair of first doped regions by a non-zero distance.


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