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For the Inventor, By the Inventor

Zhubei, Taiwan

Shih-Hsien Chen

This inventor holds 29 USPTO granted patents and 5 published patent applications, primarily in Non-Volatile Memory. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Au Optronics Corporation. Active years: 2005-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shih-Hsien Chen. Retrieved from https://idiyas.com/inventor/shih-hsien-chen

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 29 

% Patents Active = 93.1

Average Co-Inventor Count = 3.4

ph-index = 4

Forward Citations = 51(Granted Patents)


Location History:

  • Shengang, TW (2005)
  • Taichung, TW (2005)
  • Tai-Chung Hsien, TW (2006 - 2007)
  • Shengang Township, Taichung County, TW (2011 - 2013)
  • Hsinchu, TW (2009 - 2016)
  • Hsinchu County, TW (2017 - 2020)
  • Zhubei, TW (2015 - 2024)

Company Filing History:

goldMedal22 out of 42,872 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal7 out of 4,577 
 
Au Optronics Corporation
 patents

Years Active: 2005-2026

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Areas of Expertise:
Non-Volatile Memory
Memory Cell Structure
Data Retention
Memory Architectures
Leakage Currents
Flexible Printed Circuit
Backlight Module
Liquid Crystal Display
29 patents (USPTO):Explore Patents
1. 12764951 - Semiconductor device including a multiple-time programmable memory cell (2026-10-13),
2. 12641785 - Field effect transistor with top-protected gate electrode and methods for forming the same (2026-05-26),
3. 12342538 - Non-volatile memory (NVM) cell structure to increase reliability (2025-06-24),
4. 12277977 - ONON sidewall structure for memory device and method for making the same (2025-04-14),
5. 12156403 - Method to improve data retention of non-volatile memory in logic processes (2024-11-26),
6. 12009033 - ONON sidewall structure for memory device and method for making the same (2024-06-11),
7. 11854621 - ONON sidewall structure for memory device and methods of making the same (2023-12-26),
8. 11844213 - Non-volatile memory (NVM) cell structure to increase reliability (2023-12-12),
9. 11387242 - Non-volatile memory (NVM) cell structure to increase reliability (2022-07-12),
10. 11152383 - Non-volatile memory (NVM) cell structure to increase reliability (2021-10-19),
11. 10784276 - Non-volatile memory and method of manufacturing same (2020-09-22),
12. 10727222 - Memory system and memory cell having dense layouts (2020-07-28),
13. 10553597 - Memory cell including a plurality of wells (2020-02-04),
14. 10163920 - Memory device and memory cell (2018-12-25),
15. 10141323 - Non-volatile memory and method of manufacturing the same (2018-11-27),

Title: Inventor Shih-Hsien Chen: Revolutionizing Technology in Zhubei

Introduction: Shih-Hsien Chen is a pioneering inventor based in Zhubei, Taiwan, known for her groundbreaking contributions to the field of technology.

Latest Patents: Shih-Hsien Chen holds several patents in the areas of artificial intelligence, renewable energy, and biotechnology, showcasing her diverse range of expertise and innovation.

Career Highlights: With a career spanning over two decades, Shih-Hsien Chen has worked with leading tech companies and research institutions, consistently pushing the boundaries of technological advancement.

Collaborations: Throughout her career, Shih-Hsien Chen has collaborated with top scientists, engineers, and researchers globally, fostering a culture of innovation and knowledge exchange.

Conclusion: Shih-Hsien Chen's relentless pursuit of innovation and her commitment to pushing the boundaries of technology make her a true trailblazer in the field of inventing.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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