The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 12, 2022

Filed:

Oct. 13, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Shih-Hsien Chen, Zhubei, TW;

Chun-Yao Ko, Hsinchu, TW;

Felix Ying-Kit Tsui, Cupertino, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); H01L 27/11524 (2017.01); H01L 27/11529 (2017.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/788 (2006.01); H01L 27/11531 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11524 (2013.01); H01L 27/11529 (2013.01); H01L 27/11531 (2013.01); H01L 29/0649 (2013.01); H01L 29/66825 (2013.01); H01L 29/7883 (2013.01);
Abstract

An integrated chip includes a first well region, second well region, and third well region disposed within a substrate. The second well region is laterally between the first and third well regions. An isolation structure is disposed within the substrate and laterally surrounds the first, second, and third well regions. A floating gate overlies the substrate and laterally extends from the first well region to the third well region. A dielectric structure is disposed under the floating gate. A bit line write region is disposed within the second well region and includes source/drain regions disposed on opposite sides of the floating gate. A bit line read region is disposed within the second well region, is laterally offset from the bit line write region by a non-zero distance, and includes source/drain regions disposed on the opposite sides of the floating gate.


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