The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2020

Filed:

Nov. 26, 2018
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Hau-Yan Lu, Hsinchu, TW;

Shih-Hsien Chen, Hsinchu County, TW;

Chun-Yao Ko, Hsinchu, TW;

Felix Ying-Kit Tsui, Cupertino, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11568 (2017.01); H01L 27/11521 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11568 (2013.01); H01L 27/11521 (2013.01);
Abstract

A semiconductor device is provided. The semiconductor device comprises a first active region, a second active region and a third active region, a first poly region, a second poly region, a third poly region, a first doped region and a second doped region. The first active region, the second active region and the third active region are separated and parallel with each other. The first poly region is arranged over the first and second active regions. The second poly region is arranged over the first and second active regions. The third poly region is arranged over the second and third active regions. The first doped region is in the second active region and between the first poly region and the second poly region. The second doped region is in the second active region and between the second poly region and the third poly region.


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