The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 05, 2017

Filed:

Oct. 17, 2016
Applicant:

Taiwan Semiconductor Manufacturing Company., Ltd., Hsin-Chu, TW;

Inventors:

Chung-Wei Chang, Hsin-Chu, TW;

Han-Chi Liu, Dahu Shiang, TW;

Chun-Yao Ko, Hsin-Chu, TW;

Shou-Gwo Wuu, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 21/761 (2006.01); H01L 31/0352 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1463 (2013.01); H01L 21/761 (2013.01); H01L 27/14643 (2013.01); H01L 27/14689 (2013.01); H01L 27/14603 (2013.01); H01L 27/14609 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 31/035272 (2013.01);
Abstract

The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a semiconductor substrate having a first type of dopant; a semiconductor layer having a second type of dopant different from the first type of dopant and disposed on the semiconductor substrate; a photo-sensitive structure formed in the semiconductor layer; a multi-layer interconnect (MLI) structure disposed on the semiconductor layer; a color filter disposed on the MLI structure and disposed above the photo-sensitive structure; and a microlens disposed over the color filter and disposed above the photo-sensitive structure.


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