The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2017
Filed:
Oct. 30, 2015
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Shih-Hsien Chen, Hsinchu County, TW;
Hau-Yan Lu, Hsinchu, TW;
Liang-Tai Kuo, Hsinchu County, TW;
Chun-Yao Ko, Hsinchu, TW;
Felix Ying-Kit Tsui, Cupertino, CA (US);
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A non-volatile memory structure includes a semiconductor substrate and a first layer of a first dopant type in the semiconductor substrate. The non-volatile memory structure further includes a first well region of a second dopant type over the first layer, a second well region of the second dopant type over the first layer and spaced apart from the first well region, and a third well region of the first dopant type disposed between the first well region and the second well region and extending downward to the first layer.