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For the Inventor, By the Inventor

Hsinchu, Taiwan

Chun-Feng Nieh

USPTO Granted Patents = 81 

Average Co-Inventor Count = 4.1

ph-index = 9

Forward Citations = 436(Granted Patents)


Inventors with similar research interests:


Location History:

  • Baoshan Township, TW (2009 - 2013)
  • Hsinchu County, TW (2012 - 2013)
  • Hsin-Chu, TW (2011 - 2024)

Company Filing History:

goldMedal81 out of 40,635 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2009-2025

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81 patents (USPTO):
1. 12477764 - Method of manufacturing a source/drain of a semiconductor device using multiple implantation processes (2025-11-18),
2. 12283515 - Method and device to reduce epitaxial defects due to contact stress upon a semicondcutor wafer (2025-04-21),
3. 12255101 - Ion implantation of nanostructures for nano-FET (2025-03-18),
4. 12211901 - Semiconductor device having a doped fin well (2025-01-28),
5. 12211701 - Gate structure of semiconductor device and method of manufacture (2025-01-28),
6. 12100738 - Semiconductor device with implant and method of manufacturing same (2024-09-24),
7. 12021082 - Enhanced channel strain to reduce contact resistance in NMOS FET devices (2024-06-25),
8. 11984322 - Semiconductor device and manufacturing method thereof (2024-05-14),
9. 11978634 - Reduce well dopant loss in FinFETs through co-implantation (2024-05-07),
10. 11935793 - Dual dopant source/drain regions and methods of forming same (2024-03-19),
11. 11901235 - Ion implantation for nano-FET (2024-02-13),
12. 11728219 - Method for fabricating a semiconductor device (2023-08-15),
13. 11677012 - Method of manufacturing semiconductor devices (2023-06-13),
14. 11670683 - Semiconductor device with implant and method of manufacturing same (2023-06-06),
15. 11640986 - Implantation and annealing for semiconductor device (2023-05-02),

Title: Championing Innovation: The Pioneering Spirit of Chun-Feng Nieh

Introduction:

In the bustling city of Hsinchu, Taiwan, resides an individual whose inventive spirit and unwavering commitment to driving progress through innovation continue to shape the landscape of modern technology. Chun-Feng Nieh, a prolific inventor with a remarkable portfolio of 72 patents, stands as a beacon of inspiration for the next generation of inventors worldwide.

Latest Patents:

Among his latest patents is the groundbreaking invention of "Dual dopant source/drain regions and methods of forming same," revolutionizing the semiconductor industry with its innovative approach to forming source/drain regions. Additionally, the invention of "Ion implantation for nano-FET" showcases Chun-Feng Nieh's prowess in advancing nanoelectronics through meticulous processes for achieving precision in doped channel junctions.

Career Highlights:

Chun-Feng Nieh's illustrious career is closely intertwined with the innovative powerhouse, Taiwan Semiconductor Manufacturing Company Limited (TSMC). Within the walls of TSMC, he has played a pivotal role in pushing the boundaries of technological advancement, setting new standards for excellence in the semiconductor industry.

Collaborations:

Collaboration is at the core of Chun-Feng Nieh's success, and among his esteemed coworkers are Huicheng Chang and Yu-Chang Lin. Together, they form a dynamic team driving innovation and pushing the frontiers of technology to new heights.

Conclusion:

In conclusion, Chun-Feng Nieh's remarkable journey as an inventor epitomizes the transformative power of creativity, perseverance, and collaboration in shaping a better tomorrow. His pioneering spirit continues to inspire and ignite the passion of inventors worldwide, heralding a future where innovation thrives and progress knows no bounds.

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