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For the Inventor, By the Inventor

Hsinchu, Taiwan

Chun-Feng Nieh

This inventor holds 82 USPTO granted patents and 15 published patent applications, primarily in Semiconductor Fabrication (CPC class H01L29-66795). Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Taiwan Semiconductor Manufacturing Co., Ltd.. Active years: 2009-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chun-Feng Nieh. Retrieved from https://idiyas.com/inventor/chun-feng-nieh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 82 

% Patents Active = 79.3

Average Co-Inventor Count = 4.2

ph-index = 9

Forward Citations = 442(Granted Patents)

Forward Citations (Not Self Cited) = 417(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • Baoshan Township, TW (2009 - 2013)
  • Hsinchu County, TW (2012 - 2013)
  • Hsin-Chu, TW (2011 - 2024)

Company Filing History:

goldMedal81 out of 42,926 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal1 out of 491 
 
Taiwan Semiconductor Manufacturing Co., Ltd.
 patents

Years Active: 2009-2026

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Areas of Expertise:
Ion Implantation
FinFET
Epitaxial Defects
Channel Strain
Source/Drain Regions
Doped Fin Well
Nano-FET
Co-Implantation
Thermal Annealing
Recessed Fin
Semiconductor Manufacturing
Gate Structure
82 patents (USPTO):Explore Patents
1. 12563997 - Warm wafer after ion cryo-implantation (2026-02-24),
2. 12477764 - Method of manufacturing a source/drain of a semiconductor device using multiple implantation processes (2025-11-18),
3. 12283515 - Method and device to reduce epitaxial defects due to contact stress upon a semicondcutor wafer (2025-04-21),
4. 12255101 - Ion implantation of nanostructures for nano-FET (2025-03-18),
5. 12211901 - Semiconductor device having a doped fin well (2025-01-28),
6. 12211701 - Gate structure of semiconductor device and method of manufacture (2025-01-28),
7. 12100738 - Semiconductor device with implant and method of manufacturing same (2024-09-24),
8. 12021082 - Enhanced channel strain to reduce contact resistance in NMOS FET devices (2024-06-25),
9. 11984322 - Semiconductor device and manufacturing method thereof (2024-05-14),
10. 11978634 - Reduce well dopant loss in FinFETs through co-implantation (2024-05-07),
11. 11935793 - Dual dopant source/drain regions and methods of forming same (2024-03-19),
12. 11901235 - Ion implantation for nano-FET (2024-02-13),
13. 11728219 - Method for fabricating a semiconductor device (2023-08-15),
14. 11677012 - Method of manufacturing semiconductor devices (2023-06-13),
15. 11670683 - Semiconductor device with implant and method of manufacturing same (2023-06-06),

Title: Championing Innovation: The Pioneering Spirit of Chun-Feng Nieh

Introduction:

In the bustling city of Hsinchu, Taiwan, resides an individual whose inventive spirit and unwavering commitment to driving progress through innovation continue to shape the landscape of modern technology. Chun-Feng Nieh, a prolific inventor with a remarkable portfolio of 72 patents, stands as a beacon of inspiration for the next generation of inventors worldwide.

Latest Patents:

Among his latest patents is the groundbreaking invention of "Dual dopant source/drain regions and methods of forming same," revolutionizing the semiconductor industry with its innovative approach to forming source/drain regions. Additionally, the invention of "Ion implantation for nano-FET" showcases Chun-Feng Nieh's prowess in advancing nanoelectronics through meticulous processes for achieving precision in doped channel junctions.

Career Highlights:

Chun-Feng Nieh's illustrious career is closely intertwined with the innovative powerhouse, Taiwan Semiconductor Manufacturing Company Limited (TSMC). Within the walls of TSMC, he has played a pivotal role in pushing the boundaries of technological advancement, setting new standards for excellence in the semiconductor industry.

Collaborations:

Collaboration is at the core of Chun-Feng Nieh's success, and among his esteemed coworkers are Huicheng Chang and Yu-Chang Lin. Together, they form a dynamic team driving innovation and pushing the frontiers of technology to new heights.

Conclusion:

In conclusion, Chun-Feng Nieh's remarkable journey as an inventor epitomizes the transformative power of creativity, perseverance, and collaboration in shaping a better tomorrow. His pioneering spirit continues to inspire and ignite the passion of inventors worldwide, heralding a future where innovation thrives and progress knows no bounds.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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