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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12211901 B1

PDFFull Text
Date of Patent:
Jan. 28, 2025

Filed:

Jul. 20, 2022

Semiconductor device having a doped fin well

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Bau-Ming Wang, Kaohsiung, TW;

Che-Fu Chiu, New Taipei, TW;

Chun-Feng Nieh, Hsinchu, TW;

Huicheng Chang, Tainan, TW;

Yee-Chia Yeo, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Younes Boulghassoul

Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 21/266 (2006.01); H01L 21/28 (2006.01); H01L 21/74 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/08 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1083 (2013.01); H01L 21/02532 (2013.01); H01L 21/26513 (2013.01); H01L 21/266 (2013.01); H01L 21/28088 (2013.01); H01L 21/74 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 21/823842 (2013.01); H01L 21/823871 (2013.01); H01L 27/0924 (2013.01); H01L 27/0928 (2013.01); H01L 29/0847 (2013.01); H01L 29/1054 (2013.01); H01L 29/4966 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract

A semiconductor device may include a semiconductor fin, a source/drain region extending from the semiconductor fin, and a gate electrode over the semiconductor fin. The semiconductor fin may include a first well and a channel region over the first well. The first well may have a first dopant at a first dopant concentration and the channel region may have the first dopant at a second dopant concentration smaller than the first dopant concentration. The first dopant concentration may be in range from 10atoms/cmto 10atoms/cm.

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