The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2025
Filed:
Jun. 13, 2022
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Tsan-Chun Wang, Hsinchu, TW;
Chun-Feng Nieh, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); C23C 14/48 (2006.01); H01J 37/317 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 21/3115 (2006.01); H01L 21/3215 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3215 (2013.01); C23C 14/48 (2013.01); H01J 37/3171 (2013.01); H01L 21/02321 (2013.01); H01L 21/28176 (2013.01); H01L 21/3115 (2013.01); H01L 21/31155 (2013.01); H01L 29/4966 (2013.01); H01L 29/517 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01); H01L 21/28088 (2013.01);
Abstract
A semiconductor device and method of manufacture are provided. In some embodiments a divergent ion beam is utilized to implant ions into a capping layer, wherein the capping layer is located over a first metal layer, a dielectric layer, and an interfacial layer over a semiconductor fin. The ions are then driven from the capping layer into one or more of the first metal layer, the dielectric layer, and the interfacial layer.