The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2024
Filed:
Apr. 25, 2023
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Yu-Chang Lin, Hsinchu, TW;
Tien-Shun Chang, New Taipei, TW;
Chun-Feng Nieh, Hsinchu, TW;
Huicheng Chang, Tainan, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 21/225 (2006.01); H01L 21/265 (2006.01); H01L 21/266 (2006.01); H01L 21/324 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1054 (2013.01); H01L 21/2253 (2013.01); H01L 21/26513 (2013.01); H01L 21/26586 (2013.01); H01L 21/266 (2013.01); H01L 21/324 (2013.01); H01L 29/0653 (2013.01); H01L 29/6659 (2013.01); H01L 29/66795 (2013.01); H01L 29/7834 (2013.01); H01L 29/7851 (2013.01);
Abstract
A FinFET is provided including a channel region containing a constituent element and excess atoms, the constituent element belonging to a group of the periodic table of elements, wherein said excess atoms are nitrogen, or belong to said group of the periodic table of elements, and a concentration of said excess atoms in the channel region is in the range between about 1019 cm−3 and about 1020 cm−3.