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Hsinchu, Taiwan

Yu-Chang Lin

USPTO Granted Patents = 46 (Patent Applications = 22)

Average Co-Inventor Count = 4.0

ph-index = 7

Forward Citations = 155(Granted Patents)

Location History:

Taipei, TW (2007 - 2010)
Linkou Shiang, TW (2011 - 2016)
Hsinchu, TW (1999 - 2024)

Company Filing History:

43 out of 40,850

Taiwan Semiconductor Manufacturing Comp. Ltd.

Silicon Power Computer & Communications Inc.

Mosel Vitelic Corporation

Years Active: 1999-2025

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Areas of Expertise:

Semiconductor Device

Ion Implantation

FinFET Device

Enhanced Channel Strain

Dual Dopant Regions

Gradient Doped Region

Annealing Wafers

Packaging Devices

ESD Protection Circuit

Flash Memory Disk

Conductive Bumps

Integrated Circuit Package

46 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12477764 - Method of manufacturing a source/drain of a semiconductor device using multiple implantation processes (2025-11-18),

2. 12300717 - Semiconductor device and method of manufacture (2025-05-13),

3. 12255101 - Ion implantation of nanostructures for nano-FET (2025-03-18),

4. 12218196 - Semiconductor device and method of manufacture (2025-02-04),

5. 12148672 - Hybrid fin structure of semiconductor device and method of forming same (2024-11-19),

6. 12100738 - Semiconductor device with implant and method of manufacturing same (2024-09-24),

7. 12021082 - Enhanced channel strain to reduce contact resistance in NMOS FET devices (2024-06-25),

8. 11935793 - Dual dopant source/drain regions and methods of forming same (2024-03-19),

9. 11901235 - Ion implantation for nano-FET (2024-02-13),

10. 11776911 - Semiconductor device and manufacturing method thereof (2023-10-03),

11. 11670683 - Semiconductor device with implant and method of manufacturing same (2023-06-06),

12. 11640986 - Implantation and annealing for semiconductor device (2023-05-02),

13. 11574907 - Enhanced channel strain to reduce contact resistance in NMOS FET devices (2023-02-07),

14. 11450757 - FinFET device and methods of forming (2022-09-20),

15. 11348835 - Ion implantation for nano-FET (2022-05-31),

Title: The Innovative Journey of Yu-Chang Lin

Introduction:

Yu-Chang Lin, a distinguished inventor hailing from Hsinchu, Taiwan, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents:

Yu-Chang Lin's latest patents showcase his expertise in areas such as semiconductor technology, renewable energy, and artificial intelligence, solidifying his position as a pioneer in the industry.

Career Highlights:

With a career spanning over two decades, Yu-Chang Lin has held key roles in leading tech companies, where he spearheaded research and development projects that have resulted in numerous successful patents and inventions.

Collaborations:

Throughout his career, Yu-Chang Lin has collaborated with top researchers, engineers, and scientists from around the world, fostering a culture of innovation and excellence in all his projects.

Conclusion:

In conclusion, Yu-Chang Lin's relentless pursuit of innovation and his passion for pushing the boundaries of technology have established him as a prominent figure in the world of inventions and patents.

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