The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2026

Filed:

Mar. 22, 2024
Applicant:

Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;

Inventors:

Meng-Han Lin, Hsinchu City, TW;

Yu-Chang Lin, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 64/62 (2025.01); H10D 64/01 (2025.01);
U.S. Cl.
CPC ...
H10D 64/0112 (2026.01); H10D 64/62 (2025.01);
Abstract

The present disclosure provides a semiconductor device and a method for forming the same. The semiconductor device includes a substrate including an isolation structure defining an active region, a gate structure disposed on the active region of the substrate, a source and a drain respectively disposed in the substrate at opposite sides of the gate structure in a first direction, blocking patterns respectively disposed on the source and drain in which each source and drain including first regions covered by the blocking patterns and a second region exposed by the blocking patterns, and first and second silicide layers respectively embedded in the second regions of the source and drain and each including first portions and a second portion between the first portions. A length of the first portion in the first direction is smaller than that of the second portion.


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