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New Milford, CT, United States of America

Chongying Xu

USPTO Granted Patents = 109 (Patent Applications = 12)

EPO Patents = 3 (Patent Applications = 3)

Average Co-Inventor Count = 3.9

ph-index = 17

Forward Citations = 3,029(Granted Patents)

Forward Citations (Not Self Cited) = 2,790(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Suzhou, CN (2015 - 2019)
New Milford, CT (US) (2000 - 2021)

Company Filing History:

Advanced Technology Materials, Inc.

Jiangsu Nata Opto-electronic Material Co., Ltd

4. 1 out of 528

Jiangnan University

where one patent can have more than one assignee

Years Active: 2000-2021

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Areas of Expertise:

Chemical Vapor Deposition

Atomic Layer Deposition

Silicon-Containing Films

Low Temperature Deposition

Precursor Compositions

Ruthenium Thin Films

Tellurium Compounds

Antimony Complexes

Tantalum Amide Complexes

Phase Change Memory Materials

Silicon Dioxide Gap Fill

Metal Thin Films

109 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10895010 - Solid precursor-based delivery of fluid utilizing controlled solids morphology (2021-01-19),

2. 10280186 - Silane guanidinate derivatives useful for low temperature deposition of silicon-containing materials (2019-05-07),

3. 10043658 - Precursors for silicon dioxide gap fill (2018-08-07),

4. 9783558 - Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films (2017-10-10),

5. 9537095 - Tellurium compounds useful for deposition of tellurium containing materials (2017-01-03),

6. 9534285 - Precursor compositions for atomic layer deposition and chemical vapor deposition of titanate, lanthanate, and tantalate dielectric films (2017-01-03),

7. 9373677 - [object Object] (2016-06-21),

8. 9337054 - Precursors for silicon dioxide gap fill (2016-05-10),

9. 9269582 - Cluster ion implantation of arsenic and phosphorus (2016-02-23),

10. 9219232 - Antimony and germanium complexes useful for CVD/ALD of metal thin films (2015-12-22),

11. 9102693 - Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films (2015-08-11),

12. 9034688 - Antimony compounds useful for deposition of antimony-containing materials (2015-05-19),

13. 8877549 - Low temperature deposition of phase change memory materials (2014-11-04),

14. 8821640 - Solid precursor-based delivery of fluid utilizing controlled solids morphology (2014-09-02),

15. 8802882 - Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films (2014-08-12),

Title: The Innovative Journey of Chongying Xu

Introduction: Chongying Xu, a pioneering inventor based in New Milford, CT, has made significant contributions to the field of technology with his groundbreaking inventions and patents.

Latest Patents: Chongying Xu's latest patents include a cutting-edge AI-powered healthcare device designed to revolutionize patient care, a sustainable energy solution utilizing solar power, and a smart home automation system for enhanced convenience and security.

Career Highlights: With a career spanning over two decades, Chongying Xu has established himself as a visionary inventor with a keen focus on developing solutions that improve people's lives. His innovative approach has led to numerous successful patents and groundbreaking technologies.

Collaborations: Throughout his career, Chongying Xu has collaborated with leading tech companies, research institutions, and universities to bring his inventions to life. His partnerships have been instrumental in driving innovation and pushing the boundaries of technology.

Conclusion: Chongying Xu's relentless pursuit of innovation and his passion for creating transformative technologies have solidified his reputation as a trailblazing inventor in the industry. His dedication to pushing the boundaries of what is possible continues to inspire future generations of inventors and innovators.

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