The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2015

Filed:

Mar. 18, 2014
Applicant:

Advanced Technology Materials, Inc., Danbury, CT (US);

Inventors:

Tianniu Chen, Rocky Hill, CT (US);

William Hunks, Waterbury, CT (US);

Philip S. H. Chen, Bethel, CT (US);

Chongying Xu, New Milford, CT (US);

Leah Maylott, Farmington, CT (US);

Assignee:

ENTEGRIS, INC., Billerica, MA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C07F 9/90 (2006.01); H01L 21/02 (2006.01); C23C 16/18 (2006.01); C07C 211/65 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02568 (2013.01); C07C 211/65 (2013.01); C07F 9/902 (2013.01); C07F 9/908 (2013.01); H01L 45/06 (2013.01); H01L 45/144 (2013.01); H01L 45/1616 (2013.01); C23C 16/18 (2013.01);
Abstract

Precursors for use in depositing antimony-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of GeSbTechalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM) or for the manufacturing of thermoelectric devices, by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).


Find Patent Forward Citations

Loading…