The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2017
Filed:
Jul. 16, 2014
Entegris, Inc., Billerica, MA (US);
Matthias Stender, Phoenix, AZ (US);
Chongying Xu, New Milford, CT (US);
Tianniu Chen, Westford, MA (US);
William Hunks, Waterbury, CT (US);
Philip S. H. Chen, Bethel, CT (US);
Jeffrey F. Roeder, Brookfield, CT (US);
Thomas H. Baum, New Fairfield, CT (US);
Entegris, Inc., Billerica, MA (US);
Abstract
Precursors for use in depositing tellurium-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of GeSbTechalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM), by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).