The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2016
Filed:
Jun. 27, 2008
William Hunks, Waterbury, CT (US);
Chongying Xu, New Milford, CT (US);
Bryan C. Hendrix, Danbury, CT (US);
Jeffrey F. Roeder, Brookfield, CT (US);
Steven M. Bilodeau, Oxford, CT (US);
Weimin LI, New Milford, CT (US);
William Hunks, Waterbury, CT (US);
Chongying Xu, New Milford, CT (US);
Bryan C. Hendrix, Danbury, CT (US);
Jeffrey F. Roeder, Brookfield, CT (US);
Steven M. Bilodeau, Oxford, CT (US);
Weimin Li, New Milford, CT (US);
ENTEGRIS, INC., Billerica, MA (US);
Abstract
A full fill trench structure is described, including a microelectronic device substrate having a high aspect ratio trench therein and filled with silicon dioxide of a substantially void-free character and substantially uniform density throughout its bulk mass. A method of manufacturing a semiconductor product also is described, involving use of specific silicon precursor compositions for forming substantially void-free and substantially uniform density silicon dioxide material in the trench. The precursor fill composition may include silicon and germanium, to produce a microelectronic device structure including a GeO/SiOtrench fill material. A suppressor component may be employed in the precursor fill composition, to eliminate or minimize seam formation in the cured trench fill material.