The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 2015
Filed:
Apr. 11, 2014
Entegris, Inc., Billerica, MA (US);
William Hunks, Waterbury, CT (US);
Tianniu Chen, Westford, MA (US);
Chongying Xu, Suzhou, CN;
Jeffrey F. Roeder, Brookfield, CT (US);
Thomas H. Baum, New Fairfield, CT (US);
Matthias Stender, Phoenix, AZ (US);
Philip S. H. Chen, Bethel, CT (US);
Gregory T. Stauf, Branchburg, NJ (US);
Bryan C. Hendrix, Danbury, CT (US);
ENTEGRIS, INC., Billerica, MA (US);
Abstract
Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.