The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2016
Filed:
Mar. 22, 2012
Applicants:
Oleg Byl, Southbury, CT (US);
Chongying Xu, New Milford, CT (US);
William Hunks, Waterbury, CT (US);
Richard S. Ray, New Milford, CT (US);
Inventors:
Oleg Byl, Southbury, CT (US);
Chongying Xu, New Milford, CT (US);
William Hunks, Waterbury, CT (US);
Richard S. Ray, New Milford, CT (US);
Assignee:
ENTEGRIS, INC., Billerica, MA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/265 (2006.01); H01J 37/317 (2006.01);
U.S. Cl.
CPC ...
H01L 21/265 (2013.01); H01J 37/3171 (2013.01); H01L 21/26566 (2013.01); H01J 2237/08 (2013.01); H01L 21/26513 (2013.01);
Abstract
An ion implantation method, in which a dopant source composition is ionized to form dopant ions, and the dopant ions are implanted in a substrate. The dopant source composition includes cluster phosphorus or cluster arsenic compounds, for achieving P- and/or As-doping, in the production of doped articles of manufacture, e.g., silicon wafers or precursor structures for manufacturing microelectronic devices.