The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2016
Filed:
Jun. 23, 2011
Julie Cissell, Houston, TX (US);
Chongying Xu, New Milford, CT (US);
Thomas M. Cameron, Newtown, CT (US);
William Hunks, Waterbury, CT (US);
David W. Peters, Kingsland, TX (US);
Julie Cissell, Houston, TX (US);
Chongying Xu, New Milford, CT (US);
Thomas M. Cameron, Newtown, CT (US);
William Hunks, Waterbury, CT (US);
David W. Peters, Kingsland, TX (US);
ENTEGRIS, INC., Billerica, MA (US);
Abstract
A method of forming a dielectric material, comprising doping a zirconium oxide material, using a dopant precursor selected from the group consisting of Ti(NMe); Ti(NMeEt); Ti(NEt);TiCl4; tBuN═Nb(NEt); tBuN═Nb(NMe); t-BuN═Nb(NEtMe); t-AmN═Nb(NEt); t-AmN═Nb(NEtMe); t-AmN═Nb(NMe); t-AmN═Nb(OBu-t); Nb-13; Nb(NEt); Nb(NEt); Nb(N(CH)); Nb(OC2H); Nb(thd)(OPr-i); SiH(OMe); SiCU; Si(NMe); (MeSi)NH; GeRx(OR)wherein x is from 0 to 4, each Ris independently selected from H or C-Calkyl and each Ris independently selected from C-Calkyl; GeCl; Ge(NR)wherein each Ris independently selected from H and C-Calkyl; and (RGe)NH wherein each Ris independently selected from C-Calkyl; bis(N,N'-diisopropyl-1,3-propanediamide) titanium; and tetrakis(isopropylmethylamido) titanium; wherein Me is methyl, Et is ethyl, Pr-i is isopropyl, t-Bu is tertiary butyl, t-Am is tertiary amyl, and thd is 2,2,6,6-tetramethyl-3,5-heptanedionate. Doped zirconium oxide materials of the present disclosure are usefully employed in ferroelectric capacitors and dynamic random access memory (DRAM) devices.