Advanced Technology Materials, Inc.

Entegris, Inc.

Jiangnan University

Jiangsu Nata Opto-electronic Material Co., Ltd

Chongying Xu

Thomas H Baum

Jeffrey F Roeder

Bryan Clark Hendrix

Tianniu Chen

Ziyun Wang

William Hunks

Alexander S Borovik

Matthias Stender

Philip S H Chen

Thomas M Cameron

Michael B Korzenski

Eliodor G Ghenciu

Gregory T Stauf

Steven M Bilodeau

Ravi Kumar Laxman

Scott L Battle

Weimin Li

Luping Wang

James J Welch

Jose I Arno

John N Gregg

Edward A Sturm

Brian L Benac

Michael J Wodjenski

Gautam Bhandari

David W Minsek

Melissa A Petruska

Donn Naito

John M Cleary

Leah Maylott

Matthew Healy

Ralph J Carl

Adrien Lavoie

Glenn M Tom

Michael A Todd

Oleg Byl

Harsono S Simka

Juan E Dominguez

David Walter Peters

David Daniel Bernhard

Richard S Ray

Witold Paw

Daniel J Vestyck

Jorge A Lubguban

Xiao Ma

Tzuhn-Yan Lin

Dongsheng Xu

Yuqiang Ding

James T Y Lin

Abigail Ebbing

Niamh McMahon

Frank R Hedges

John M Lansdown

Julie Cissell

Philip SH Chen

Jeffrey R Roeder

Apparatus and method for volatilizing a source reagent susceptible to particle generation or presence of particles in the corresponding source reagent vapor, in which such particle generation or presence is suppressed by structural or processing features of the vapor generation system. Such apparatus and method are applicable to liquid and solid source reagents, particularly solid source reagents such as metal halides, e.g., hafnium chloride. The source reagent in one specific implementation is constituted by a porous monolithic bulk form of the source reagent material. The apparatus and method of the invention are usefully employed to provide source reagent vapor for applications such as atomic layer deposition (ALD) and ion implantation.

Solid precursor-based delivery of fluid utilizing controlled solids morphology

A guanidinate silane compound of any of formulae (I)-(IV) is described, having utility as a precursor in vapor deposition processes for forming a silicon-containing film on a substrate. The guanidinate silane compound can be used in vapor deposition processes such as chemical vapor deposition and atomic layer deposition, at temperatures below 400&#xb0; C., to form silicon-containing films, e.g., silicon nitride films, useful as diffusion barrier layers, etch stop layers, and sidewall coating films, in integrated circuitry, flat-panel displays, solar panels, and other microelectronic and optoelectronic applications.

Silane guanidinate derivatives useful for low temperature deposition of silicon-containing materials

A full fill trench structure is described, including a microelectronic device substrate having a high aspect ratio trench therein and filled with silicon dioxide of a substantially void-free character and substantially uniform density throughout its bulk mass. A method of manufacturing a semiconductor product also is described, involving use of specific silicon precursor compositions for forming substantially void-free and substantially uniform density silicon dioxide material in the trench. The precursor fill composition may include silicon and germanium, to produce a microelectronic device structure including a GeO/SiOtrench fill material. A suppressor component may be employed in the precursor fill composition, to eliminate or minimize seam formation in the cured trench fill material.

Precursors for silicon dioxide gap fill

Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (SiN), and a method of depositing the silicon precursors on substrates using low temperature (e.g., &#x3c;550&#xb0; C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.

Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films

Barium, strontium, tantalum and lanthanum precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of titanate thin films. The precursors have the formula M(Cp), wherein M is strontium, barium, tantalum or lanthanum, and Cp is cyclopentadienyl, of the formula wherein each of R-Ris the same as or different from one another, with each being independently selected from among hydrogen, C-Calkyl, C-Camino, C-Caryl, C-Calkoxy, C-Calkylsilyl, C-Calkenyl, RRRNNR, wherein R, Rand Rmay be the same as or different from one another and each is independently selected from hydrogen and C-Calkyl, and pendant ligands including functional group(s) providing further coordination to the metal center M. The precursors of the above formula are useful to achieve uniform coating of high dielectric constant materials in the manufacture of flash memory and other microelectronic devices.

Precursor compositions for atomic layer deposition and chemical vapor deposition of titanate, lanthanate, and tantalate dielectric films

Precursors for use in depositing tellurium-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of GeSbTechalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM), by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).

Tellurium compounds useful for deposition of tellurium containing materials

A method of forming a dielectric material, comprising doping a zirconium oxide material, using a dopant precursor selected from the group consisting of Ti(NMe); Ti(NMeEt); Ti(NEt);TiCl4; tBuN&#x2550;Nb(NEt); tBuN&#x2550;Nb(NMe); t-BuN&#x2550;Nb(NEtMe); t-AmN&#x2550;Nb(NEt); t-AmN&#x2550;Nb(NEtMe); t-AmN&#x2550;Nb(NMe); t-AmN&#x2550;Nb(OBu-t); Nb-13; Nb(NEt); Nb(NEt); Nb(N(CH)); Nb(OC2H); Nb(thd)(OPr-i); SiH(OMe); SiCU; Si(NMe); (MeSi)NH; GeRx(OR)wherein x is from 0 to 4, each Ris independently selected from H or C-Calkyl and each Ris independently selected from C-Calkyl; GeCl; Ge(NR)wherein each Ris independently selected from H and C-Calkyl; and (RGe)NH wherein each Ris independently selected from C-Calkyl; bis(N,N'-diisopropyl-1,3-propanediamide) titanium; and tetrakis(isopropylmethylamido) titanium; wherein Me is methyl, Et is ethyl, Pr-i is isopropyl, t-Bu is tertiary butyl, t-Am is tertiary amyl, and thd is 2,2,6,6-tetramethyl-3,5-heptanedionate. Doped zirconium oxide materials of the present disclosure are usefully employed in ferroelectric capacitors and dynamic random access memory (DRAM) devices.

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An ion implantation method, in which a dopant source composition is ionized to form dopant ions, and the dopant ions are implanted in a substrate. The dopant source composition includes cluster phosphorus or cluster arsenic compounds, for achieving P- and/or As-doping, in the production of doped articles of manufacture, e.g., silicon wafers or precursor structures for manufacturing microelectronic devices.

Cluster ion implantation of arsenic and phosphorus

Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.

Antimony and germanium complexes useful for CVD/ALD of metal thin films

Precursors for use in depositing antimony-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of GeSbTechalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM) or for the manufacturing of thermoelectric devices, by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).

Antimony compounds useful for deposition of antimony-containing materials

A system and method for forming a phase change memory material on a substrate, in which the substrate is contacted with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, at temperature below 350&#xb0; C., with the contacting being carried out via chemical vapor deposition or atomic layer deposition. Various tellurium, germanium and germanium-tellurium precursors are described, which are useful for forming GST phase change memory films on substrates.

Low temperature deposition of phase change memory materials

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New Milford, CT, United States of America

Chongying Xu