The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2019
Filed:
Dec. 01, 2017
Silane guanidinate derivatives useful for low temperature deposition of silicon-containing materials
Jiangsu Nata Opto-electronic Material Co., Ltd, Suzhou, CN;
Jianqnan University, Wuxi, CN;
Xiao Ma, Suzhou, CN;
Chongying Xu, Suzhou, CN;
Tzuhn-Yan Lin, Suzhou, CN;
Dongsheng Xu, Suzhou, CN;
Yuqiang Ding, Wuxi, CN;
JIANGSU NATA OPTO-ELECTRONIC MATERIAL CO., LTD, Suzhou, CN;
JIANGNAN UNIVERSITY, Wuxi, CN;
Abstract
A guanidinate silane compound of any of formulae (I)-(IV) is described, having utility as a precursor in vapor deposition processes for forming a silicon-containing film on a substrate. The guanidinate silane compound can be used in vapor deposition processes such as chemical vapor deposition and atomic layer deposition, at temperatures below 400° C., to form silicon-containing films, e.g., silicon nitride films, useful as diffusion barrier layers, etch stop layers, and sidewall coating films, in integrated circuitry, flat-panel displays, solar panels, and other microelectronic and optoelectronic applications.