Tzuhn-Yan Lin

Title: Tzuhn-Yan Lin: Innovator in Silicon-Containing Materials

Introduction

Tzuhn-Yan Lin is a notable inventor based in Suzhou, China. He has made significant contributions to the field of materials science, particularly in the development of silicon-containing materials. His innovative work has implications for various high-tech applications.

Latest Patents

Tzuhn-Yan Lin holds a patent for "Silane guanidinate derivatives useful for low temperature deposition of silicon-containing materials." This patent describes a guanidinate silane compound that serves as a precursor in vapor deposition processes. These processes are essential for forming silicon-containing films on substrates. The compound can be utilized in chemical vapor deposition and atomic layer deposition at temperatures below 400°C. The resulting silicon-containing films, such as silicon nitride films, are valuable in integrated circuitry, flat-panel displays, solar panels, and other microelectronic and optoelectronic applications.

Career Highlights

Throughout his career, Tzuhn-Yan Lin has worked with prominent organizations, including Jiangsu Nata Opto-electronic Material Co., Ltd and Jiangnan University. His experience in these institutions has allowed him to advance his research and contribute to the development of innovative materials.

Collaborations

Tzuhn-Yan Lin has collaborated with notable colleagues, including Xiao Ma and Chongying Xu. These partnerships have fostered a collaborative environment that enhances research and innovation in the field.

Conclusion

Tzuhn-Yan Lin's contributions to the development of silicon-containing materials highlight his role as an innovator in the field. His patent and career achievements reflect his commitment to advancing technology in microelectronics and optoelectronics.