The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2017
Filed:
Jul. 14, 2015
Applicant:
Entegris, Inc., Billerica, MA (US);
Inventors:
Ziyun Wang, Allen, TX (US);
Chongying Xu, Suzhou, CN;
Bryan Hendrix, Danbury, CT (US);
Jeffrey Roeder, Brookfield, CT (US);
Tianniu Chen, Westford, MA (US);
Thomas H. Baum, New Fairfield, CT (US);
Assignee:
Entegris, Inc., Billerica, MA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C07F 7/10 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C07F 7/10 (2013.01); H01L 21/02271 (2013.01);
Abstract
Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (SiN), and a method of depositing the silicon precursors on substrates using low temperature (e.g., <550° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.