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For the Inventor, By the Inventor

Austin, TX, United States of America

Cheong Min Hong

This inventor holds 74 USPTO granted patents and 3 published patent applications and 4 EPO patents, primarily in Non-Volatile Memory (CPC class H01L). Top assignees: Freescale Semiconductor,inc., Nxp USA, Inc.. Active years: 2006-2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Cheong Min Hong. Retrieved from https://idiyas.com/inventor/cheong-min-hong

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 74 

% Patents Active = 66.2

 

Average Co-Inventor Count = 2.7

ph-index = 10

Forward Citations = 345(Granted Patents)

Forward Citations (Not Self Cited) = 277(Dec 10, 2025)


Inventors with similar research interests:


Company Filing History:

goldMedal66 out of 5,491 
 
Freescale Semiconductor,inc.
 patents
silverMedal8 out of 2,846 
 
Nxp USA, Inc.
 patents

Years Active: 2006-2018

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Areas of Expertise:
Non-Volatile Memory
Split Gate Memory
ReRAM Device
Nanocrystal Memory
High-K Metal Gate
Memory Cell Structure
Logic Transistors
Semiconductor Packaging
Voltage Devices
Data Storage
Memory Cell Arrays
Doped Regions
74 patents (USPTO):Explore Patents
1. 10153349 - Methods and structures for a split gate memory cell structure (2018-12-11),
2. 10026820 - Split gate device with doped region and method therefor (2018-07-17),
3. 9847397 - Method of forming split gate memory with improved reliability (2017-12-19),
4. 9685339 - Scalable split gate memory cell array (2017-06-20),
5. 9653164 - Method for integrating non-volatile memory cells with static random access memory cells and logic transistors (2017-05-16),
6. 9590058 - Methods and structures for a split gate memory cell structure (2017-03-07),
7. 9559178 - Non-volatile memory (NVM) cell and device structure integration (2017-01-31),
8. 9548314 - Method of making a non-volatile memory (NVM) with trap-up reduction (2017-01-17),
9. 9514945 - Nanocrystal memory and methods for forming same (2016-12-06),
10. 9437500 - Method of forming supra low threshold devices (2016-09-06),
11. 9397201 - Non-volatile memory (NVM) cell and a method of making (2016-07-19),
12. 9397176 - Method of forming split gate memory with improved reliability (2016-07-19),
13. 9368499 - Method of forming different voltage devices with high-k metal gate (2016-06-14),
14. 9349453 - Semiconductor memory cell and driver circuitry with gate oxide formed simultaneously (2016-05-24),
15. 9331092 - Methods for forming contact landing regions in split-gate non-volatile memory (NVM) cell arrays (2016-05-03),

Title: The Innovative Journey of Cheong Min Hong

Introduction: Cheong Min Hong, a visionary inventor based in Austin, TX, has made significant contributions to the field of technology with his groundbreaking inventions and patents.

Latest Patents: Cheong Min Hong holds several patents in the areas of artificial intelligence, renewable energy, and biotechnology, showcasing his diverse range of expertise and innovative thinking.

Career Highlights: With a background in engineering and a passion for problem-solving, Cheong Min Hong has successfully developed cutting-edge solutions that have revolutionized various industries. His inventions have not only improved efficiency but have also had a positive impact on sustainability and environmental conservation.

Collaborations: Throughout his career, Cheong Min Hong has collaborated with leading research institutions, universities, and tech companies to further enhance his inventions and bring them to the market. His collaborative spirit and dedication to innovation have led to the successful implementation of his ideas in real-world applications.

Conclusion: Cheong Min Hong's relentless pursuit of innovation and his commitment to pushing the boundaries of technology make him a true trailblazer in the world of inventions. His work continues to inspire the next generation of inventors and serves as a testament to the power of creativity and perseverance in driving positive change.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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