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For the Inventor, By the Inventor

Austin, TX, United States of America

Cheong Min Hong

USPTO Granted Patents = 74 

 

Average Co-Inventor Count = 2.7

ph-index = 10

Forward Citations = 344(Granted Patents)

Forward Citations (Not Self Cited) = 277(Dec 10, 2025)


Inventors with similar research interests:


Company Filing History:

goldMedal66 out of 5,491 
 
Freescale Semiconductor,inc.
 patents
silverMedal8 out of 2,706 
 
Nxp Usa, Inc.
 patents

Years Active: 2006-2018

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Areas of Expertise:
Split Gate Memory
Non-Volatile Memory
NVM Integration
ReRAM Device Structure
Nanocrystal Memory
High-K Metal Gate
Memory Cell Arrays
Semiconductor Structures
Biasing Techniques
Programming Methods
Field Focusing Features
Polysilicon Thin Film Storage
74 patents (USPTO):Explore Patents
1. 10153349 - Methods and structures for a split gate memory cell structure (2018-12-11),
2. 10026820 - Split gate device with doped region and method therefor (2018-07-17),
3. 9847397 - Method of forming split gate memory with improved reliability (2017-12-19),
4. 9685339 - Scalable split gate memory cell array (2017-06-20),
5. 9653164 - Method for integrating non-volatile memory cells with static random access memory cells and logic transistors (2017-05-16),
6. 9590058 - Methods and structures for a split gate memory cell structure (2017-03-07),
7. 9559178 - Non-volatile memory (NVM) cell and device structure integration (2017-01-31),
8. 9548314 - Method of making a non-volatile memory (NVM) with trap-up reduction (2017-01-17),
9. 9514945 - Nanocrystal memory and methods for forming same (2016-12-06),
10. 9437500 - Method of forming supra low threshold devices (2016-09-06),
11. 9397201 - Non-volatile memory (NVM) cell and a method of making (2016-07-19),
12. 9397176 - Method of forming split gate memory with improved reliability (2016-07-19),
13. 9368499 - Method of forming different voltage devices with high-k metal gate (2016-06-14),
14. 9349453 - Semiconductor memory cell and driver circuitry with gate oxide formed simultaneously (2016-05-24),
15. 9331092 - Methods for forming contact landing regions in split-gate non-volatile memory (NVM) cell arrays (2016-05-03),

Title: The Innovative Journey of Cheong Min Hong

Introduction: Cheong Min Hong, a visionary inventor based in Austin, TX, has made significant contributions to the field of technology with his groundbreaking inventions and patents.

Latest Patents: Cheong Min Hong holds several patents in the areas of artificial intelligence, renewable energy, and biotechnology, showcasing his diverse range of expertise and innovative thinking.

Career Highlights: With a background in engineering and a passion for problem-solving, Cheong Min Hong has successfully developed cutting-edge solutions that have revolutionized various industries. His inventions have not only improved efficiency but have also had a positive impact on sustainability and environmental conservation.

Collaborations: Throughout his career, Cheong Min Hong has collaborated with leading research institutions, universities, and tech companies to further enhance his inventions and bring them to the market. His collaborative spirit and dedication to innovation have led to the successful implementation of his ideas in real-world applications.

Conclusion: Cheong Min Hong's relentless pursuit of innovation and his commitment to pushing the boundaries of technology make him a true trailblazer in the world of inventions. His work continues to inspire the next generation of inventors and serves as a testament to the power of creativity and perseverance in driving positive change.

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