The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2016
Filed:
Dec. 12, 2014
Applicants:
Cheong Min Hong, Austin, TX (US);
Euhngi Lee, Austin, TX (US);
Inventors:
Cheong Min Hong, Austin, TX (US);
Euhngi Lee, Austin, TX (US);
Assignee:
Freescale Semiconductor, Inc., Austin, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28282 (2013.01); H01L 27/11517 (2013.01); H01L 27/11563 (2013.01);
Abstract
A charge-storing device includes a charge-storing layer including nanocrystals. The nanocrystals are formed by a deposition technique incorporating deuterated hydrides. The deuterated hydride can be used to form an amorphous semiconductor material that is annealed to form nanoparticles to be incorporated into the charge-storing layer.