The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2018
Filed:
Mar. 23, 2016
Freescale Semiconductor, Inc., Austin, TX (US);
Weize Chen, Phoenix, AZ (US);
Cheong Min Hong, Austin, TX (US);
Konstantin V. Loiko, Austin, TX (US);
Jane A. Yater, Austin, TX (US);
NXP USA, Inc., Austin, TX (US);
Abstract
A method of forming a semiconductor device using a substrate includes forming a first select gate over the substrate, a charge storage layer over the first select gate, over the second select gate, and over the substrate in a region between the first select gate and the second select gate, wherein the charge storage layer is conformal, and a control gate layer over the charge storage layer, wherein the control gate layer is conformal. The method further includes performing a first implant that penetrates through the control gate layer in a middle portion of the region between the first select gate and the second select gate to the substrate to form a doped region in the substrate in a first portion of the region between the first select gate and the second select gate that does not reach the first select gate and does not reach the second select gate.