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For the Inventor, By the Inventor

Cupertino, CA, United States of America

Chentsau Chris Ying

This inventor holds 47 USPTO granted patents and 7 published patent applications and 3 EPO patents, primarily in Carbon Film Technology. Top assignees: Applied Materials, Inc., Micro Materials Inc., Other. Active years: 2001-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chentsau Chris Ying. Retrieved from https://idiyas.com/inventor/chentsau-chris-ying

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 47 

% Patents Active = 57.4

 

Average Co-Inventor Count = 4.7

ph-index = 12

Forward Citations = 509(Granted Patents)


Company Filing History:

goldMedal41 out of 14,433 
 
Applied Materials, Inc.
 patents
silverMedal1 out of 27 
 
Micro Materials Inc.
 patents
bronzeMedal5 out of 834,453 
Other
 patents

Years Active: 2001-2025

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Areas of Expertise:
Carbon Compound Film
Graphene Deposition
Spin-Orbit Torque MRAM
Ion Beam Etch
Metal Silicide Layers
Nanocrystalline Diamond
PVD Carbon
3D NAND Hardmask
Selective Etch
CVD Process
Semiconductor Layers
Electrode Patterning
47 patents (USPTO):Explore Patents
1. 12288672 - Methods and apparatus for carbon compound film deposition (2025-04-29),
2. 12201030 - Spin-orbit torque MRAM structure and manufacture thereof (2025-01-14),
3. 12057329 - Selective etch using material modification and RF pulsing (2024-08-06),
4. 11723283 - Spin-orbit torque MRAM structure and manufacture thereof (2023-08-08),
5. 11682556 - Methods of improving graphene deposition for processes using microwave surface-wave plasma on dielectric materials (2023-06-20),
6. 11566325 - Silicon carbonitride gapfill with tunable carbon content (2023-01-31),
7. 11387071 - Multi-source ion beam etch system (2022-07-12),
8. 11384428 - Carbon layer covered mask in 3D applications (2022-07-12),
9. 11289342 - Damage free metal conductor formation (2022-03-29),
10. 11289331 - Methods for graphene formation using microwave surface-wave plasma on dielectric materials (2022-03-29),
11. 11145808 - Methods for etching a structure for MRAM applications (2021-10-12),
12. 11114333 - Method for depositing and reflow of a high quality etch resistant gapfill dielectric film (2021-09-07),
13. 11056406 - Stack of multiple deposited semiconductor layers (2021-07-06),
14. 11049731 - Methods for film modification (2021-06-29),
15. 10964527 - Residual removal (2021-03-30),

Title: Chentsau Chris Ying: A Pioneer in Technological Innovation

Introduction: Chentsau Chris Ying, a trailblazer in the world of technology, hails from Cupertino, CA (US). With an impressive portfolio of 44 patents, his relentless pursuit of innovation and commitment to pushing the boundaries of what is possible have solidified his legacy as a true pioneer in the industry.

Latest Patents: Among his latest patents is the "Spin-orbit torque MRAM structure and manufacture thereof", which involves spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) devices. These devices feature an SOT layer aligned with a magnetic tunnel junction stack, allowing for reduced shunting current and self-alignment of the MTJ layer with the SOT layer in a single etching process. Another patent focuses on improving graphene deposition, enhancing the formation of graphene layers with lower resistance and in a shorter timeframe.

Career Highlights: Chentsau Chris Ying has made significant contributions during his tenure at Applied Materials, Inc. and other prominent technology firms. His innovative spirit and expertise in cutting-edge technologies have played a pivotal role in shaping the landscape of the industry.

Collaborations: Throughout his career, Chentsau Chris Ying has collaborated with esteemed professionals such as Srinivas D Nemani and Ellie Y Yieh. These collaborations have led to groundbreaking advancements in technology and have further cemented his reputation as a visionary inventor.

Conclusion: Chentsau Chris Ying's impact on the technological realm is undeniable, with his pioneering work continuing to inspire future generations of innovators. His dedication to innovation and excellence serves as a testament to his remarkable legacy in the world of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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