The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 07, 2021

Filed:

Feb. 19, 2019
Applicant:

Micromaterials Llc, Wilmington, DE (US);

Inventors:

Srinivas D. Nemani, Sunnyvale, CA (US);

Ellie Y. Yieh, San Jose, CA (US);

Chentsau Ying, Cupertino, CA (US);

Assignee:

Micromaterials, LLC, Wilmington, DE (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/768 (2006.01); H01L 21/3105 (2006.01); H01L 21/02 (2006.01); C23C 16/56 (2006.01); H01L 21/033 (2006.01); C23C 16/30 (2006.01); H01L 21/687 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76801 (2013.01); C23C 16/30 (2013.01); C23C 16/56 (2013.01); H01L 21/02129 (2013.01); H01L 21/02271 (2013.01); H01L 21/02323 (2013.01); H01L 21/02337 (2013.01); H01L 21/0332 (2013.01); H01L 21/0337 (2013.01); H01L 21/3105 (2013.01); H01L 21/31051 (2013.01); H01L 21/6719 (2013.01); H01L 21/67103 (2013.01); H01L 21/67109 (2013.01); H01L 21/67126 (2013.01); H01L 21/67248 (2013.01); H01L 21/68742 (2013.01); H01L 21/68771 (2013.01); H01L 21/76828 (2013.01);
Abstract

Methods for depositing a gapfill dielectric film that may be utilized for multi-colored patterning processes are provided. In one implementation, a method for processing a substrate is provided. The method comprises filling the one or more features of a substrate with a dielectric material. The dielectric material is a doped silicate glass selected from borophosphosilicate glass (BPSG), phosphosilicate glass (PSG), and borosilicate glass (BSG). The method further comprises treating the substrate with a high-pressure anneal in the presence of an oxidizer to heal seams within the dielectric material. The high-pressure anneal comprises supplying an oxygen-containing gas mixture on a substrate in a processing chamber, maintaining the oxygen-containing gas mixture in the processing chamber at a process pressure at greater than 2 bar and thermally annealing the dielectric material in the presence of the oxygen-containing gas mixture.


Find Patent Forward Citations

Loading…