The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 2021
Filed:
Nov. 12, 2019
Applied Materials, Inc., Santa Clara, CA (US);
Jong Mun Kim, San Jose, CA (US);
Minrui Yu, Sunnyvale, CA (US);
Chando Park, Palo Alto, CA (US);
Mang-Mang Ling, San Jose, CA (US);
Jaesoo Ahn, San Jose, CA (US);
Chentsau Chris Ying, Cupertino, CA (US);
Srinivas D. Nemani, Sunnyvale, CA (US);
Mahendra Pakala, Santa Clara, CA (US);
Ellie Y. Yieh, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Embodiments of the disclosure provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate for MRAM applications. In one embodiment, a method for forming a magnetic tunnel junction (MTJ) device structure includes performing a patterning process by an ion beam etching process in a processing chamber to pattern a film stack disposed on a substrate, wherein the film stack comprises a reference layer, a tunneling barrier layer and a free layer disposed on the tunneling barrier, and determining an end point for the patterning process.