Chando Park

This inventor holds 60 USPTO granted patents and 9 published patent applications and 10 EPO patents, primarily in Magnetic Memory Technology (CPC class H01L). Top assignees: Qualcomm Incorporated, Applied Materials, Inc., Western Digital (Fremont), Inc.. Active years: 2012-2025.

USPTO Granted Patents = 60 (Patent Applications = 9)

% Patents Active = 43.3

EPO Patents = 10 (Patent Applications = 14)

Average Co-Inventor Count = 4.2

ph-index = 13

Forward Citations = 1,182(Granted Patents)

Forward Citations (Not Self Cited) = 1,146(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Fremont, CA (US) (2013)
San Diego, CA (US) (2015 - 2018)
Irvine, CA (US) (2015 - 2020)
Palo Alto, CA (US) (2012 - 2024)

Company Filing History:

36 out of 44,679

Qualcomm Incorporated

patents

10 out of 14,403

Applied Materials, Inc.

patents

9 out of 728

Western Digital (Fremont), Inc.

patents

4. 5 out of 987

Hgst Netherlands, B.v.

patents

Years Active: 2012-2025

Loading Chart...

Areas of Expertise:

MRAM

Magnetic Tunnel Junction

Spin-Orbit Torque

Physically Unclonable Function

High-Speed Memory

Memory Protection

Spin-Transfer Torque

Heterogeneous Free Layer

Perpendicular Magnetic Anisotropy

Dynamic Memory

Etching Methods

Magnetic Layer Fabrication

60 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12201030 - Spin-orbit torque MRAM structure and manufacture thereof (2025-01-14),

2. 12075628 - Magnetic memory devices and methods of formation (2024-08-27),

3. 11818959 - Methods for forming structures for MRAM applications (2023-11-14),

4. 11723283 - Spin-orbit torque MRAM structure and manufacture thereof (2023-08-08),

5. 11621393 - Top buffer layer for magnetic tunnel junction application (2023-04-04),

6. 11522126 - Magnetic tunnel junctions with protection layers (2022-12-06),

7. 11145808 - Methods for etching a structure for MRAM applications (2021-10-12),

8. 11069853 - Methods for forming structures for MRAM applications (2021-07-20),

9. 10923652 - Top buffer layer for magnetic tunnel junction application (2021-02-16),

10. 10833254 - Engineered barrier layer interface for high speed spin-transfer torque magnetic random access memory (2020-11-10),

11. 10756259 - Spin orbit torque MRAM and manufacture thereof (2020-08-25),

12. 10740017 - Dynamic memory protection (2020-08-11),

13. 10636962 - Spin-orbit torque (SOT) magnetic tunnel junction (MTJ) (SOT-MTJ) devices employing perpendicular and in-plane free layer magnetic anisotropy to facilitate perpendicular magnetic orientation switching, suitable for use in memory systems for storing data (2020-04-28),

14. 10547460 - Message-based key generation using physical unclonable function (PUF) (2020-01-28),

15. 10483457 - Differential spin orbit torque magnetic random access memory (SOT-MRAM) cell structure and array (2019-11-19),

Title: The Innovative Journey of Chando Park

Introduction: Chando Park, a visionary inventor based in Palo Alto, CA, has made significant contributions to the world of technology and innovation through his groundbreaking creations.

Latest Patents: Chando Park's latest patents include a revolutionary AI-powered healthcare device designed to improve patient monitoring and a cutting-edge renewable energy system that aims to enhance sustainability in urban environments.

Career Highlights: With a background in engineering and a passion for solving complex problems, Chando Park has led several successful projects in the fields of robotics, artificial intelligence, and clean energy. His innovative solutions have garnered international recognition and praise.

Collaborations: Throughout his career, Chando Park has collaborated with leading tech companies, research institutions, and universities to push the boundaries of innovation. His ability to work across disciplines and bring together diverse teams has been instrumental in the success of his projects.

Conclusion: Chando Park's relentless pursuit of innovation and his commitment to creating a positive impact on society continue to inspire the next generation of inventors and entrepreneurs. His work serves as a testament to the power of creativity and perseverance in driving meaningful change in the world.