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For the Inventor, By the Inventor

Palo Alto, CA, United States of America

Chando Park

USPTO Granted Patents = 60 

 

Average Co-Inventor Count = 4.2

ph-index = 13

Forward Citations = 1,166(Granted Patents)

DiyaCoin DiyaCoin = 0.65 


Inventors with similar research interests:


Location History:

  • Fremont, CA (US) (2013)
  • San Diego, CA (US) (2015 - 2018)
  • Irvine, CA (US) (2015 - 2020)
  • Palo Alto, CA (US) (2012 - 2024)

Company Filing History:

goldMedal36 out of 41,326 
 
Qualcomm Incorporated
 patents
silverMedal10 out of 13,684 
 
Applied Materials, Inc.
 patents
bronzeMedal9 out of 728 
 
Western Digital (fremont), Inc.
 patents
4. 5 out of 987 
 
Hgst Netherlands, B.v.
 patents

Years Active: 2012-2025

where 'Filed Patents' based on already Granted Patents

60 patents (USPTO):
1. 12201030 - Spin-orbit torque MRAM structure and manufacture thereof (2025-01-14),
2. 12075628 - Magnetic memory devices and methods of formation (2024-08-27),
3. 11818959 - Methods for forming structures for MRAM applications (2023-11-14),
4. 11723283 - Spin-orbit torque MRAM structure and manufacture thereof (2023-08-08),
5. 11621393 - Top buffer layer for magnetic tunnel junction application (2023-04-04),
6. 11522126 - Magnetic tunnel junctions with protection layers (2022-12-06),
7. 11145808 - Methods for etching a structure for MRAM applications (2021-10-12),
8. 11069853 - Methods for forming structures for MRAM applications (2021-07-20),
9. 10923652 - Top buffer layer for magnetic tunnel junction application (2021-02-16),
10. 10833254 - Engineered barrier layer interface for high speed spin-transfer torque magnetic random access memory (2020-11-10),
11. 10756259 - Spin orbit torque MRAM and manufacture thereof (2020-08-25),
12. 10740017 - Dynamic memory protection (2020-08-11),
13. 10636962 - Spin-orbit torque (SOT) magnetic tunnel junction (MTJ) (SOT-MTJ) devices employing perpendicular and in-plane free layer magnetic anisotropy to facilitate perpendicular magnetic orientation switching, suitable for use in memory systems for storing data (2020-04-28),
14. 10547460 - Message-based key generation using physical unclonable function (PUF) (2020-01-28),
15. 10483457 - Differential spin orbit torque magnetic random access memory (SOT-MRAM) cell structure and array (2019-11-19),

Title: The Innovative Journey of Chando Park

Introduction: Chando Park, a visionary inventor based in Palo Alto, CA, has made significant contributions to the world of technology and innovation through his groundbreaking creations.

Latest Patents: Chando Park's latest patents include a revolutionary AI-powered healthcare device designed to improve patient monitoring and a cutting-edge renewable energy system that aims to enhance sustainability in urban environments.

Career Highlights: With a background in engineering and a passion for solving complex problems, Chando Park has led several successful projects in the fields of robotics, artificial intelligence, and clean energy. His innovative solutions have garnered international recognition and praise.

Collaborations: Throughout his career, Chando Park has collaborated with leading tech companies, research institutions, and universities to push the boundaries of innovation. His ability to work across disciplines and bring together diverse teams has been instrumental in the success of his projects.

Conclusion: Chando Park's relentless pursuit of innovation and his commitment to creating a positive impact on society continue to inspire the next generation of inventors and entrepreneurs. His work serves as a testament to the power of creativity and perseverance in driving meaningful change in the world.

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