The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2020
Filed:
Jun. 04, 2019
Engineered barrier layer interface for high speed spin-transfer torque magnetic random access memory
Qualcomm Incorporated, San Diego, CA (US);
Chando Park, Palo Alto, CA (US);
Jimmy Jianan Kan, San Diego, CA (US);
Peiyuan Wang, San Diego, CA (US);
Seung Hyuk Kang, San Diego, CA (US);
Qualcomm Incorporated, San Diego, CA (US);
Abstract
A perpendicular magnetic tunnel junction may include a free layer, a reference layer, and a barrier layer. The barrier layer may be arranged between the free layer and the reference layer. The barrier layer may include a first interface and a second interface. The first interface may face the free layer, and a second interface may face the reference layer. The first interface may not physically correlate with the second interface.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile