The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2020
Filed:
Jun. 04, 2019
Engineered barrier layer interface for high speed spin-transfer torque magnetic random access memory
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventors:
Chando Park, Palo Alto, CA (US);
Jimmy Jianan Kan, San Diego, CA (US);
Peiyuan Wang, San Diego, CA (US);
Seung Hyuk Kang, San Diego, CA (US);
Assignee:
Qualcomm Incorporated, San Diego, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/06 (2006.01); H01L 43/10 (2006.01); H01L 43/12 (2006.01); G11C 11/16 (2006.01); H01L 43/08 (2006.01); H01F 10/32 (2006.01);
U.S. Cl.
CPC ...
H01L 43/10 (2013.01); G11C 11/161 (2013.01); H01F 10/3286 (2013.01); H01L 43/08 (2013.01); H01L 43/12 (2013.01);
Abstract
A perpendicular magnetic tunnel junction may include a free layer, a reference layer, and a barrier layer. The barrier layer may be arranged between the free layer and the reference layer. The barrier layer may include a first interface and a second interface. The first interface may face the free layer, and a second interface may face the reference layer. The first interface may not physically correlate with the second interface.