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For the Inventor, By the Inventor

San Diego, CA, United States of America

Jimmy Jianan Kan

USPTO Granted Patents = 23 

 

Average Co-Inventor Count = 4.4

ph-index = 8

Forward Citations = 191(Granted Patents)


Company Filing History:

goldMedal23 out of 41,498 
 
Qualcomm Incorporated
 patents

Years Active: 2016-2020

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23 patents (USPTO):Explore Patents
1. 10833254 - Engineered barrier layer interface for high speed spin-transfer torque magnetic random access memory (2020-11-10),
2. 10547460 - Message-based key generation using physical unclonable function (PUF) (2020-01-28),
3. 10431734 - Engineered barrier layer interface for high speed spin-transfer torque magnetic random access memory (2019-10-01),
4. 10381060 - High-speed, low power spin-orbit torque (SOT) assisted spin-transfer torque magnetic random access memory (STT-MRAM) bit cell array (2019-08-13),
5. 10224368 - Voltage-switched magneto-resistive random access memory (MRAM) employing separate read operation circuit paths from a shared spin torque write operation circuit path (2019-03-05),
6. 10134808 - Magnetic tunnel junction (MTJ) devices with heterogeneous free layer structure, particularly suited for spin-torque-transfer (STT) magnetic random access memory (MRAM) (STT MRAM) (2018-11-20),
7. 10103319 - Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devices (2018-10-16),
8. 10096649 - Reducing or avoiding metal deposition from etching magnetic tunnel junction (MTJ) devices, including magnetic random access memory (MRAM) devices (2018-10-09),
9. 9870811 - Physically unclonable function based on comparison of MTJ resistances (2018-01-16),
10. 9824735 - System and method to generate a random number (2017-11-21),
11. 9813049 - Comparator including a magnetic tunnel junction (MTJ) device and a transistor (2017-11-07),
12. 9728718 - Magnetic tunnel junction (MTJ) device array (2017-08-08),
13. 9704919 - High aspect ratio vertical interconnect access (via) interconnections in magnetic random access memory (MRAM) bit cells (2017-07-11),
14. 9646670 - Spin-orbit-torque magnetoresistive random access memory with voltage-controlled anisotropy (2017-05-09),
15. 9634237 - Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devices (2017-04-25),

Title: The Innovative Journey of Jimmy Jianan Kan

Introduction: Jimmy Jianan Kan is a visionary inventor based in San Diego, CA, known for his groundbreaking contributions to the field of technology and beyond.

Latest Patents: Jimmy Jianan Kan holds several patents in various technological domains, showcasing his versatility and creativity in innovation.

Career Highlights: With a career spanning over two decades, Jimmy Jianan Kan has worked with leading tech companies, bringing to life cutting-edge ideas and solutions that have revolutionized industries.

Collaborations: Throughout his career, Jimmy Jianan Kan has collaborated with top researchers, engineers, and designers, fostering a culture of innovation and excellence in all his projects.

Conclusion: Jimmy Jianan Kan's passion for innovation and his relentless drive to push boundaries continue to inspire the next generation of inventors and entrepreneurs.

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