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For the Inventor, By the Inventor

San Diego, CA, United States of America

Jimmy Jianan Kan

This inventor holds 23 USPTO granted patents and 5 published patent applications and 4 EPO patents, primarily in Magnetic Random Access Memory. Top assignee: Qualcomm Incorporated. Active years: 2016-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jimmy Jianan Kan. Retrieved from https://idiyas.com/inventor/jimmy-jianan-kan

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 23 

% Patents Active = 21.7

 

Average Co-Inventor Count = 4.4

ph-index = 8

Forward Citations = 198(Granted Patents)


Company Filing History:

goldMedal23 out of 45,002 
 
Qualcomm Incorporated
 patents

Years Active: 2016-2020

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Areas of Expertise:
Spin-Transfer Torque
Magnetic Tunnel Junction
Random Access Memory
Spin-Orbit Torque
Magnesium Oxide
Heterogeneous Free Layer
Voltage-Controlled Anisotropy
Physical Unclonable Function
Interconnect Access
Low Power Design
Bit Cell Array
23 patents (USPTO):Explore Patents
1. 10833254 - Engineered barrier layer interface for high speed spin-transfer torque magnetic random access memory (2020-11-10),
2. 10547460 - Message-based key generation using physical unclonable function (PUF) (2020-01-28),
3. 10431734 - Engineered barrier layer interface for high speed spin-transfer torque magnetic random access memory (2019-10-01),
4. 10381060 - High-speed, low power spin-orbit torque (SOT) assisted spin-transfer torque magnetic random access memory (STT-MRAM) bit cell array (2019-08-13),
5. 10224368 - Voltage-switched magneto-resistive random access memory (MRAM) employing separate read operation circuit paths from a shared spin torque write operation circuit path (2019-03-05),
6. 10134808 - Magnetic tunnel junction (MTJ) devices with heterogeneous free layer structure, particularly suited for spin-torque-transfer (STT) magnetic random access memory (MRAM) (STT MRAM) (2018-11-20),
7. 10103319 - Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devices (2018-10-16),
8. 10096649 - Reducing or avoiding metal deposition from etching magnetic tunnel junction (MTJ) devices, including magnetic random access memory (MRAM) devices (2018-10-09),
9. 9870811 - Physically unclonable function based on comparison of MTJ resistances (2018-01-16),
10. 9824735 - System and method to generate a random number (2017-11-21),
11. 9813049 - Comparator including a magnetic tunnel junction (MTJ) device and a transistor (2017-11-07),
12. 9728718 - Magnetic tunnel junction (MTJ) device array (2017-08-08),
13. 9704919 - High aspect ratio vertical interconnect access (via) interconnections in magnetic random access memory (MRAM) bit cells (2017-07-11),
14. 9646670 - Spin-orbit-torque magnetoresistive random access memory with voltage-controlled anisotropy (2017-05-09),
15. 9634237 - Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devices (2017-04-25),

Title: The Innovative Journey of Jimmy Jianan Kan

Introduction: Jimmy Jianan Kan is a visionary inventor based in San Diego, CA, known for his groundbreaking contributions to the field of technology and beyond.

Latest Patents: Jimmy Jianan Kan holds several patents in various technological domains, showcasing his versatility and creativity in innovation.

Career Highlights: With a career spanning over two decades, Jimmy Jianan Kan has worked with leading tech companies, bringing to life cutting-edge ideas and solutions that have revolutionized industries.

Collaborations: Throughout his career, Jimmy Jianan Kan has collaborated with top researchers, engineers, and designers, fostering a culture of innovation and excellence in all his projects.

Conclusion: Jimmy Jianan Kan's passion for innovation and his relentless drive to push boundaries continue to inspire the next generation of inventors and entrepreneurs.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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