The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 09, 2018

Filed:

Aug. 19, 2016
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Chando Park, Irvine, CA (US);

Jimmy Jianan Kan, San Diego, CA (US);

Seung Hyuk Kang, San Diego, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/22 (2006.01); H01L 43/10 (2006.01); H01L 43/12 (2006.01); H01L 43/08 (2006.01); H01L 43/02 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
H01L 27/228 (2013.01); G11C 11/161 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01);
Abstract

Aspects disclosed include reducing or avoiding metal deposition from etching magnetic tunnel junction (MTJ) devices. In one example, a width of a bottom electrode of an MTJ device is provided to be less than a width of the MTJ stack of the MTJ device. In this manner, etching of the bottom electrode may be reduced or avoided to reduce or avoid metal redeposition as a result of over-etching the MTJ device to avoid horizontal shorts between an adjacent device(s). In another example, a seed layer is embedded in a bottom electrode of the MTJ device. In this manner, the MTJ stack is reduced in height to reduce or avoid metal redeposition as a result of over-etching the MTJ device. In another example, an MTJ device includes an embedded seed layer in a bottom electrode which also has a width less than a width of the MTJ stack.


Find Patent Forward Citations

Park, Chando. (2018). Reducing or avoiding metal deposition from etching magnetic tunnel junction (mtj) devices, including magnetic random access memory (mram) devices (U.S. Patent No. 10096649). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10096649

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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