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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11621393 B1

PDFFull Text
Date of Patent:
Apr. 04, 2023

Filed:

Dec. 04, 2020

Top buffer layer for magnetic tunnel junction application

Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Lin Xue, San Diego, CA (US);

Chando Park, Palo Alto, CA (US);

Chi Hong Ching, Santa Clara, CA (US);

Jaesoo Ahn, San Jose, CA (US);

Mahendra Pakala, Santa Clara, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:

Patterson + Sheridan, LLP

Primary Examiner:

Sonya McCall-Shepard

Int. Cl.
CPC ...
H01L 43/12 (2006.01); C23C 14/06 (2006.01); C23C 14/54 (2006.01); H01F 10/32 (2006.01); H01F 41/32 (2006.01); H01L 43/10 (2006.01); H01L 43/02 (2006.01); H01F 10/13 (2006.01); H01L 21/67 (2006.01); C23C 14/00 (2006.01); H01F 41/30 (2006.01); H01F 10/30 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
H01L 43/12 (2013.01); C23C 14/067 (2013.01); C23C 14/541 (2013.01); G11C 11/161 (2013.01); H01F 10/325 (2013.01); H01F 10/3259 (2013.01); H01F 41/32 (2013.01); H01L 43/02 (2013.01); H01L 43/10 (2013.01); H01F 10/137 (2013.01); H01F 10/329 (2013.01); H01L 21/67167 (2013.01);
Abstract

Embodiments of the disclosure provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate for MRAM applications. In one embodiment, a magnetic tunnel junction (MTJ) device structure includes a junction structure disposed on a substrate, the junction structure comprising a first ferromagnetic layer and a second ferromagnetic layer sandwiching a tunneling barrier layer, a dielectric capping layer disposed on the junction structure, a metal capping layer disposed on the junction structure, and a top buffer layer disposed on the metal capping layer.

Find Patent Forward Citations

Xue, Lin. (2023). Top buffer layer for magnetic tunnel junction application (U.S. Patent No. 11621393). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11621393

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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