Lin Xue

This inventor holds 31 USPTO granted patents and 2 published patent applications and 4 EPO patents. Top assignees: Applied Materials, Inc., Qualcomm Incorporated. Active years: 2017-2025.

USPTO Granted Patents = 31 (Patent Applications = 2)

% Patents Active = 93.5

EPO Patents = 4 (Patent Applications = 5)

Average Co-Inventor Count = 4.9

ph-index = 4

Forward Citations = 53(Granted Patents)

Location History:

Sunnyvale, CA (US) (2017 - 2022)
San Jose, CA (US) (2019 - 2022)
San Diego, CA (US) (2020 - 2024)

Company Filing History:

28 out of 14,391

Applied Materials, Inc.

patents

3 out of 44,618

Qualcomm Incorporated

patents

Years Active: 2017-2025

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Areas of Expertise:

MRAM Applications

Magnetic Tunnel Junctions

Spin-Orbit Torque

Magnetic Memory Devices

Thermal Processing

Power Converters

Crystallinity Structures

Back End Memory Integration

Coupling-Pinning Layer

Switched-Mode Power Supply

Single-Inductor Multiple-Output

31 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12408557 - Methods for forming structures with desired crystallinity for MRAM applications (2025-09-02),

2. 12402535 - Magnetic tunnel junctions with tunable high perpendicular magnetic anisotropy (2025-08-26),

3. 12201030 - Spin-orbit torque MRAM structure and manufacture thereof (2025-01-14),

4. 12075628 - Magnetic memory devices and methods of formation (2024-08-27),

5. 11818959 - Methods for forming structures for MRAM applications (2023-11-14),

6. 11723283 - Spin-orbit torque MRAM structure and manufacture thereof (2023-08-08),

7. 11621393 - Top buffer layer for magnetic tunnel junction application (2023-04-04),

8. 11552244 - Magnetic tunnel junction structures and methods of manufacture thereof (2023-01-10),

9. 11522126 - Magnetic tunnel junctions with protection layers (2022-12-06),

10. 11374170 - Methods to form top contact to a magnetic tunnel junction (2022-06-28),

11. 11374165 - Method of forming ultra-smooth bottom electrode surface for depositing magnetic tunnel junctions (2022-06-28),

12. 11251364 - Magnetic tunnel junctions suitable for high temperature thermal processing (2022-02-15),

13. 11245069 - Methods for forming structures with desired crystallinity for MRAM applications (2022-02-08),

14. 11239086 - Back end memory integration process (2022-02-01),

15. 11133460 - Methods for forming structures with desired crystallinity for MRAM applications (2021-09-28),

Title: Inventor Lin Xue - Revolutionizing Technology in San Jose

Introduction: Lin Xue is a visionary inventor based in San Jose, CA, known for his groundbreaking contributions to the field of technology.

Latest Patents: Lin Xue holds several patents in the areas of artificial intelligence, machine learning, and robotics, showcasing his innovative approach to solving complex problems.

Career Highlights: With a career spanning over two decades, Lin Xue has worked with leading tech companies, spearheading projects that have pushed the boundaries of technological advancements.

Collaborations: Lin Xue has collaborated with top researchers and engineers from renowned universities and research institutions, fostering a culture of innovation and knowledge sharing.

Conclusion: Lin Xue's passion for innovation and his relentless pursuit of excellence continue to inspire the next generation of inventors and technologists worldwide.