The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2025
Filed:
Aug. 08, 2023
Applied Materials, Inc., Santa Clara, CA (US);
Minrui Yu, Santa Clara, CA (US);
Wenhui Wang, San Jose, CA (US);
Jaesoo Ahn, San Jose, CA (US);
Jong Mun Kim, San Jose, CA (US);
Sahil Patel, Sunnyvale, CA (US);
Lin Xue, San Diego, CA (US);
Chando Park, Palo Alto, CA (US);
Mahendra Pakala, Santa Clara, CA (US);
Chentsau Chris Ying, Cupertino, CA (US);
Huixiong Dai, San Jose, CA (US);
Christopher S. Ngai, Burlingame, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Embodiments of the present disclosure generally include spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) devices and methods of manufacture thereof. The SOT-MRAM devices described herein include an SOT layer laterally aligned with a magnetic tunnel junction (MTJ) stack and formed over a trench in an interconnect. Thus, the presence of the SOT layer outside the area of the MTJ stack is eliminated, and electric current passes from the interconnect to the SOT layer by SOT-interconnect overlap. The devices and methods described herein reduce the formation of shunting current and enable the MTJ to self-align with the SOT layer in a single etching process.