San Jose, CA, United States of America

Jong Mun Kim

USPTO Granted Patents = 22 

Average Co-Inventor Count = 3.5

ph-index = 3

Forward Citations = 45(Granted Patents)


Company Filing History:


Years Active: 2010-2025

where 'Filed Patents' based on already Granted Patents

22 patents (USPTO):

Title: Innovations of Jong Mun Kim: Pioneering Spin-Orbit Torque MRAM Technology

Introduction: Jong Mun Kim, based in San Jose, CA, has established himself as a prominent inventor in the field of memory technologies. With an impressive portfolio of 22 patents, Kim continues to push the boundaries of innovation in the electronics industry. His work primarily focuses on developing advanced memory solutions that enhance performance and efficiency.

Latest Patents: One of Jong Mun Kim's notable inventions is the "Spin-Orbit Torque MRAM Structure and Manufacture Thereof." This patent outlines the design and fabrication of spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) devices. The innovation includes a unique configuration where the SOT layer is laterally aligned with a magnetic tunnel junction (MTJ) stack. By eliminating the SOT layer's presence outside the MTJ stack area, Kim’s design facilitates electric current flow from the interconnect to the SOT layer through SOT-interconnect overlap. Overall, this technology reduces shunting current formation, enabling efficient self-alignment of the MTJ with the SOT layer in a single etching process.

Career Highlights: Jong Mun Kim has made significant contributions to the field while working at Applied Materials, Inc., a company known for its cutting-edge innovations in semiconductor and display manufacturing technologies. His expertise has led to numerous advancements, earning him recognition as a leader in his field.

Collaborations: Throughout his career, Kim has collaborated with talented professionals, including his coworkers Chentsau Chris Ying and Daisuke Shimizu. These partnerships have contributed to the successful development of groundbreaking technologies in the memory domain.

Conclusion: Jong Mun Kim's contributions to the field of SOT-MRAM technologies exemplify the spirit of innovation that drives the electronics industry forward. With a strong record of patents and collaborations, Kim continues to inspire future advancements in memory solutions. His work at Applied Materials, Inc. serves as a testament to his commitment to fostering innovation and excellence in technology development.

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