The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 07, 2017

Filed:

Nov. 04, 2013
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Daisuke Shimizu, Milpitas, CA (US);

Jong Mun Kim, San Jose, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/768 (2006.01); H01L 21/311 (2006.01); H01L 21/283 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76805 (2013.01); H01L 21/283 (2013.01); H01L 21/31116 (2013.01); H01L 21/31122 (2013.01); H01L 21/31138 (2013.01); H01L 21/31144 (2013.01); H01L 21/67069 (2013.01); H01L 21/76802 (2013.01); H01L 21/76879 (2013.01); H01L 21/76898 (2013.01);
Abstract

One or more openings in an organic mask layer deposited on a first insulating layer over a substrate are formed. One or more openings in the first insulating layer are formed through the openings in the organic mask using a first iodine containing gas. An antireflective layer can be deposited on the organic mask layer. One or more openings in the antireflective layer are formed down to the organic mask layer using a second iodine containing gas. The first insulating layer can be deposited on a second insulating layer over the substrate. One or more openings in the second insulating layer can be formed using a third iodine containing gas.


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