The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2021
Filed:
May. 02, 2019
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Jong Mun Kim, San Jose, CA (US);
Biao Liu, San Jose, CA (US);
Cheng Pan, San Jose, CA (US);
Erica Chen, Cupertino, CA (US);
Chentsau Ying, Cupertino, CA (US);
Srinivas Nemani, Sunnyvale, CA (US);
Ellie Yieh, San Jose, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/3105 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0206 (2013.01); H01L 21/02142 (2013.01); H01L 21/02175 (2013.01); H01L 21/02178 (2013.01); H01L 21/02181 (2013.01); H01L 21/02183 (2013.01); H01L 21/02186 (2013.01); H01L 21/02189 (2013.01); H01L 21/02192 (2013.01); H01L 21/31053 (2013.01); H01L 21/31122 (2013.01);
Abstract
Methods for removing residuals after a selective deposition process are provided. In one embodiment, the method includes performing a selective deposition process to form a metal containing dielectric material at a first location of a substrate and performing a residual removal process to remove residuals from a second location of the substrate.